Ferroelectric coupling for dual-mode non-filamentary memristors

Abstract

Memristive devices and systems have emerged as powerful technologies to fuel neuromorphic chips. However, the traditional two-terminal memristor still suffers from nonideal device characteristics, raising challenges for its further application in versatile biomimetic emulation for neuromorphic computing owing to insufficient control of filament forming for filamentary-type cells and a transport barrier for interfacial switching cells. Here, we propose three-terminal memristors with a top-gate field-effect geometry by employing a ferroelectric material, poly(vinylidene fluoride–trifluoroethylene), as the dielectric layer. This approach can finely modulate ion transport and contact barrier at the switching interface in non-filamentary perovskite memristors, thus, creating two distinct operation modes (volatile and nonvolatile). Additionally, perovskite memristors show desirable resistive switching performance, including forming-free operation, high yield of 88.9%, cycle-to-cycle variation of 7.8%, and low operating current of sub-100 nA. The dual-mode memristor is capable of emulating biological nociception in both active (perceiving pain) and blocked states (suppressing pain signaling).

Memristor-based neural networks: a bridge from device to artificial intelligence

“…Gao et al proposed a three-terminal memristor with a top-gate field effect using a ferroelectric material, namely poly(vinylidene fluoride-trifluoroethylene), as the resistance layer. 132 Two different operation modes (volatile and non-volatile) were realized by adjusting the ion transport and contact barrier at the switching interface of the ferroelectric memristor. In addition, the memristor showed ideal resistance-switching performance (high yield of 88.9%, cycle-to-cycle variation of 7.8%, and low operating current of less than 100 nA).…”

“…12d. In 2022, Gao et al fabricated a novel three-terminal trihalide perovskite (MAPbI 3 ) memristor with top-gate field effect geometry using the ferroelectric material poly-vinylidene fluoride-trifluoroethylene as the functional layer, 132 as shown in Fig. 12e.…”

Recent Progress in Multiterminal Memristors for Neuromorphic Applications

“…Similarly, our group used a ferroelectric memristor with two operational modes and a repeatable threshold switching system to simulate active nociception and blocked nociception. [133] The adaptive and cognitive capabilities of distributed processing in biological hierarchy enable it to efficiently assess complicated multimodal data. For instance, in the superior colliculus of the midbrain, multisensory neurons immediately integrate spikes from plenty of senses to activate neuronal reactions to multimodal environmental stimuli.…”

Shape‐Deformable and Locomotive MXene (Ti3C2Tx)‐Encapsulated Magnetic Liquid Metal for 3D‐Motion‐Adaptive Synapses

“…[36][37][38] By combining the working mechanism of memristor and transistor (memtransistor), increase in device function density and modulation of synaptic functions through an extra terminal for dual-mode operation can be achieved. [39][40][41] Further advancement of dual-mode operation was shown through development of biomimetic synaptic devices that can detect, memorize, and process various external stimuli such as optical [42,43] and tactile information, [44] allowing additional route to adjust synaptic functions. Furthermore, beyond human sensory system, device capable of detecting extra-sensory perception, such as magnetic field, ultrasonic waves, and micro-vibrations is seemingly the next step in sensory perceptive artificial synapse.…”