Ferroelectric Control of the Conduction at the LaAlO₃/SrTiO₃ Heterointerface

Abstract

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup ) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

Controlling the Carrier Density of SrTiO3‐Based Heterostructures with Annealing

“…In the latter approach, free carriers are induced by electrostatic gating of the conducting interface separated from the gate by a solid dielectric (typically STO or LAO) [1] , an electrolyte with mobile ions [3] or a ferroelectric material. [4] Using this approach, the gate-control of a large number of properties has been demonstrated including magnetism [5] , the anomalous Hall effect [3] , superconductivity [6] and spin-orbit coupling. [7] The two different approaches each have their strengths and weaknesses.…”

Chemical strain-dependent two-dimensional transport at RAlO3/SrTiO3 interfaces (R=La,NdLi1, Yang2, Bai3 et al. 2016Phys. Rev. B6030View full textAdd to dashboardCite

“…Non-volatile memory functions have been observed in this kind of field effect device by using a ferroelectric gate 13,14 or surface charge injection. 15 Furthermore, surface charges and chemical adsorbates have been found to have a significant influence on the 2-dimentional transport.…”

Multiband theory of superconductivity at theLaAlO3/SrTiO3interface

“…Besides, the quasi-two dimensional electron gas (q2DEG) at the interface 21 exhibits intriguing novel properties such as metalinsulator transition [22][23][24][25][26] and ferroelectricity 27 . On top of that, the ability to control these properties by external electric field 28,29 added an extra-dimension to the nanoelectronics industry 30,31 .…”