Ferroelectric capacitors for integrated circuits

Strontium Zirconate and Strontium Titanate Ceramics for High‐Voltage Applications: Synthesis, Processing, and Dielectric Properties

“…The mixture was stirred continuously at 50°-60°C for 2 h. Then, ethylene glycol (0.025 mL/mL of total solution) was added over 30 min and heated until a glassy transparent mass was formed. After drying, the solid mass was processed similarly as SrZrO 3 Slurries of the powders were prepared with water and 2-propanol and milled for 48 h in polyethylene containers using alumina media. For the nonaqueous slurries, 8 -10 wt% of PVB binder was used.…”

“…The dielectric constant (K) and dissipation factor (tan ␦) for SrZrO 3 and SrTiO 3 , each as a function of frequency, are displayed in Fig. 4; both decrease monotonically as the frequency increases.…”

“…D EVICES that contain the perovskite materials strontium zirconate (SrZrO 3 ), strontium titanate (SrTiO 3 ), and combinations thereof are used in a variety of applications. [1][2][3][4][5][6] Although widespread in use, one common limitation of these oxide-based dielectrics is low breakdown voltage. Because the energy density per unit volume of capacitor is dependent on the square of the voltage, a substantial gain in charge storage can be realized if the breakdown characteristics of the dielectric can be improved.…”

“…Both SrZrO 3 and SrTiO 3 have several characteristics that may make them suitable for high-voltage applications. Neither orthorhombic SrZrO 3 nor cubic SrTiO 3 is ferroelectric; therefore, these materials are not expected to experience electromechanical failure mechanisms that may result in dielectric breakdown.…”

Preparation of Pb(Zr0.52TiO0.48)O3 Thin Films at Low-Temperature of Less than 400°C by Hydrothermal Treatment Following Sol-Gel Deposition

“…1) For this application, it is necessary to prepare the ferroelectric film directly on semiconductor substrates. The eventual challenge would be, of course, to deposit the thin film on the silicon with LSI devices.…”