2000
DOI: 10.1088/0022-3727/33/17/305
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Ferroelectric behaviour of PZT thin films with secondary TiO2phase induced defects

Abstract: The dielectric properties and ferroelectric phase transition in tetragonal lead zirconate titanate (PZT) thin films containing titanium oxide (TiO2) as a secondary phase have been studied. TiO2 phase inclusion is observed in PZT films prepared by the electron beam evaporation of multicomponent oxides as the result of the dissociation of the pyrochlore PbTi3O7 phase on high-temperature annealing. TiO2 phase inclusion results in the asymmetry of the dielectric hysteresis along the polarization axis. Micro polar … Show more

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Cited by 4 publications
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“…5(b) was so leaky. 19) A similar trend was found in the P-E hysteresis loop measurements for the Pb excessive PZT layers grown on IrO 2 (not shown here). Emphasis should be placed on the significant improvement in ferroelectric properties for the PZT layers due to improvement in PZT film composition and crystalline properties using the TEL concentration adjustment strategy.…”
Section: P-e Hysteresis Loops For Au/pzt/lsco/pt Capacitorssupporting
confidence: 85%
“…5(b) was so leaky. 19) A similar trend was found in the P-E hysteresis loop measurements for the Pb excessive PZT layers grown on IrO 2 (not shown here). Emphasis should be placed on the significant improvement in ferroelectric properties for the PZT layers due to improvement in PZT film composition and crystalline properties using the TEL concentration adjustment strategy.…”
Section: P-e Hysteresis Loops For Au/pzt/lsco/pt Capacitorssupporting
confidence: 85%