Ferroelectric and Switching Properties of Spray Deposited NaNO<sub>2</sub>: PVA Composite Films on Porous Silicon

The process of Pd-assisted chemical etching of silicon in a solution containing HF and H2O2 was studied. The influence of factors such as etching duration and solution temperature on the morphology of the formed layers was investigated. It is shown that in process Pd - assisted etching, Pd nanoparticles remain on the walls and bottom of the pores. Those structures, as was demonstrated in early works, have the property of electro-oxidation of ethanol, which gives grounds to assert that the formed structures are Schottky-type structures. Using the electrochemical equilibrium diagram in the Si-HF system (aq.), a model of Pd-assisted etching was determined. It is shown that the polishing dissolution of Si occurs without the formation of intermediate products (SiO2).

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Section: влияние длительности и температуры формирования на скорость unclassified

Влияние температуры формирования на морфологию por-Si, получаемого методом Pd-стимулированного химического травления

Силаков¹,

Volovlikova²,

Гаврилов³

et al. 2020

Физика И Техника Полупроводников

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Fitting IGM, FGM and NLS switching models to NaNO2-PVA composite transients for its microscopic parameter estimation

Singh

Kaur

Garg

et al. 2021

Materials Today: Proceedings

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Switching related activation field for polarization-reversal and for polarization-saturation in NaNO₂-PVA thin composite films

Singh

Kaur

Garg

et al. 2018

Ferroelectrics Letters Section

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Ferroelectric and Switching Properties of Spray Deposited NaNO₂: PVA Composite Films on Porous Silicon

Cited by 8 publications

References 40 publications

Влияние температуры формирования на морфологию por-Si, получаемого методом Pd-стимулированного химического травления

Влияние температуры формирования на морфологию por-Si, получаемого методом Pd-стимулированного химического травления

Fitting IGM, FGM and NLS switching models to NaNO2-PVA composite transients for its microscopic parameter estimation

Switching related activation field for polarization-reversal and for polarization-saturation in NaNO₂-PVA thin composite films

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Ferroelectric and Switching Properties of Spray Deposited NaNO2: PVA Composite Films on Porous Silicon

Cited by 8 publications

References 40 publications

Влияние температуры формирования на морфологию por-Si, получаемого методом Pd-стимулированного химического травления

Влияние температуры формирования на морфологию por-Si, получаемого методом Pd-стимулированного химического травления

Fitting IGM, FGM and NLS switching models to NaNO2-PVA composite transients for its microscopic parameter estimation

Switching related activation field for polarization-reversal and for polarization-saturation in NaNO2-PVA thin composite films

Contact Info

Product

Resources

About

Ferroelectric and Switching Properties of Spray Deposited NaNO₂: PVA Composite Films on Porous Silicon

Switching related activation field for polarization-reversal and for polarization-saturation in NaNO₂-PVA thin composite films