Влияние температуры формирования на морфологию por-Si, получаемого методом Pd-стимулированного химического травления

Abstract

The process of Pd-assisted chemical etching of silicon in a solution containing HF and H2O2 was studied. The influence of factors such as etching duration and solution temperature on the morphology of the formed layers was investigated. It is shown that in process Pd - assisted etching, Pd nanoparticles remain on the walls and bottom of the pores. Those structures, as was demonstrated in early works, have the property of electro-oxidation of ethanol, which gives grounds to assert that the formed structures are Schottky-type structures. Using the electrochemical equilibrium diagram in the Si-HF system (aq.), a model of Pd-assisted etching was determined. It is shown that the polishing dissolution of Si occurs without the formation of intermediate products (SiO2).