2000
DOI: 10.1016/s0040-6090(00)01322-5
|View full text |Cite
|
Sign up to set email alerts
|

Ferroelectric and antiferroelectric films for microelectromechanical systems applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
65
0

Year Published

2004
2004
2021
2021

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 105 publications
(67 citation statements)
references
References 17 publications
2
65
0
Order By: Relevance
“…The precise manufacturing of fine ferroelectric structures has found use in MEM devices [32][33][34][35][36][37][38][39][40], NEM devices [41], nonvolatile memories [42][43][44] and integrated optics [13,16,17]. Conventionally, piezoelectric elements have been processed by chemical wet etching or argon milling techniques.…”
Section: Figmentioning
confidence: 99%
See 1 more Smart Citation
“…The precise manufacturing of fine ferroelectric structures has found use in MEM devices [32][33][34][35][36][37][38][39][40], NEM devices [41], nonvolatile memories [42][43][44] and integrated optics [13,16,17]. Conventionally, piezoelectric elements have been processed by chemical wet etching or argon milling techniques.…”
Section: Figmentioning
confidence: 99%
“…The selective removal of a material can have disastrous effects, such as in the case of corrosion, or being used to craft useful, precisely engineered structures like undercut etching in microelectromechanical (MEM) or nanoelectromechanical (NEM) device fabrication [32][33][34][35][36][37][38][39][40][41]. Regardless whether the process is Fig.…”
Section: Introductionmentioning
confidence: 99%
“…For example, piezoelectric materials offer actuating properties with nanoscale resolution and large actuation forces over a broad range of frequencies (Hz-MHz). This provides advantages in numerous applications such as high resolution acoustic imaging [1], morphing aircraft control surfaces [2], and high resolution nanopositioning stages [3,4]. High force magnetostrictive materials such as Terfenol-D provide broadband capability (DC up to 20 kHz) with forces up to 550 N [5,6], which are utilized in many industrial settings such as high-speed precision machining [7].…”
Section: Sponsoring/monitoring Agency Name(s) and Address(es) 10 Spomentioning
confidence: 99%
“…(38) such as finite differences and nonlinear multiple shooting [35]. The finite difference approach is used here where we consider a discretization of the time interval [t 0 , t f ] with a uniform mesh having stepsize ∆t and points t 0 , t 1 …”
Section: Magnetostrictive and Damped Oscillator Parametersmentioning
confidence: 99%
“…Therefore to reduce this critical field, a chemical modification of initial formula is often used. Actuation strains through antiferroelectricferroelectric phase transition in PZT solid solution has been described in many papers [1][2][3][4][5]. In recent years an extensive studies are devoted for more complex systems like (Pb,La)(Zr,Sn,Ti)O 3 and (Pb,Nb)(Zr,Sn,Ti)O 3 [6][7][8].…”
Section: Introductionmentioning
confidence: 99%