Fermi level shift and doping efficiency in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-doped small molecule organic semiconductors: A photoelectron spectroscopy and theoretical study

Tietze, Max L.; Burtone, Lorenzo; Riede, Moritz; Lüssem, Björn; Leo, Karl

doi:10.1103/physrevb.86.035320

Cited by 155 publications

(199 citation statements)

References 36 publications

Supporting

Mentioning

186

Contrasting

Order By: Relevance

“…Using the peak positions and FHWM listed in Table II, we are able to extract the PPL peak intensity in neat P3HT films from an exponential decay background. The polaron densities in these three films are estimated to be 8.1x10 16 21 We conclude that pure P3HT films contain mobile polarons in concentrations of the order of 10 15 cm -3 , which is…”

Section: Measurement Of Background Charge Concentration In Nominmentioning

confidence: 95%

See 1 more Smart Citation

Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

et al. 2015

View full text Add to dashboard Cite

The doping mechanism of 2, 3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4TCNQ) doped poly(3-hexylthiophene) (P3HT) thin films and solutions is studied by UV-visible and IR absorption spectral analysis. We show that integer charge transfer between the two molecules is observed in this system with 63% of the dopants producing a fully transferred charge in thin film. The primary P3HT doped species in solution and thin film are shown to be bipolarons and polarons, respectively. The absorption signatures of polarons and bipolarons are identified and their cross sections are measured, which can be used to evaluate the influence of processing conditions on the density of impurity dopant-induced polarons in nominally 'neat' P3HT films. PACS number(s): 81.05. Fb, 82.35.Cd

show abstract

Section: Measurement Of Background Charge Concentration In Nominmentioning

confidence: 95%

“…Specialized methods such as capacitance-voltage measurements, 7,15 photoelectron spectroscopy measurements, 16,17 or modeling of transistor pinch-off voltages shifts 18 have been developed to address this problem.…”

Section: Introductionmentioning

confidence: 99%

Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

et al. 2015

View full text Add to dashboard Cite

show abstract

“…[13] In this early work, the molecule was used to p-dope N,N′-di-1-naphthyl-N,N′-diphenyl-1,1′-biphenyl-4,4′diamine (α-NPD, IE ≈ 5.5 eV) and shown to significantly increase the current density sustained by these films. It was then introduced by Tietze et al [14] and Lüssem et al [15] in electronic structure and device investigations, and found to efficiently p-dope MeO-TPD or pentacene (IE ≈ 4.95 eV). Yet, the EA of the dopant and its doping limit were not fully established.…”

mentioning

confidence: 99%

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Zhang

Kahn

2017

Adv Funct Materials

View full text Add to dashboard Cite

2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ) is investigated as a molecular p-type dopant in two hole-transport materials, 2,2′,7,7′-tetrakis(N,N-diphenylamino)-9,9-spirobifluorene (Spiro-TAD) and tris(4-carbazoyl-9-ylphenyl)amine (TCTA). The electron affinity of F6-TCNNQ is determined to be 5.60 eV, one of the strongest organic molecular oxidizing agents used to date in organic electronics. p-Doping is found to be effective in Spiro-TAD (ionization energy = 5.46 eV) but not in TCTA (ionization energy = 5.85 eV). Optical absorption measurements demonstrate that charge transfer is the predominant doping mechanism in Spiro-TAD:F6-TCNNQ. The hostdopant interaction also leads to a significant alteration of the host film morphology. Finally, transport measurements done on Spiro-TAD:F6-TCNNQ as a function of dopant concentration and temperature, and using a highly doped contact layer to ensure negligible hole injection barrier, lead to an accurate measurement of the film conductivity and hole-hopping activation energy.

show abstract

“…The pentacene was either doped with the p-dopant F 6 TCNNQ (2,20 -(perfluoronaphthalene-2,6-diylidene)dimalononitrile) 8 or the n-dopant W 2 (hpp) 4 (tetra-kis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a] pyrimidinato) ditungsten (II). 9 An amorphous fluoropolymer, Cytop, is used as the top-gate dielectric.…”

Section: Top-gate Organic Depletion and Inversion Transistors With Domentioning

confidence: 99%

Top-gate organic depletion and inversion transistors with doped channel and injection contact

Liu

Kasemann

Leo

2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

show abstract

Fermi level shift and doping efficiency inp-doped small molecule organic semiconductors: A photoelectron spectroscopy and theoretical study

Cited by 155 publications

References 36 publications

Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Top-gate organic depletion and inversion transistors with doped channel and injection contact

Contact Info

Product

Resources

About