2015
DOI: 10.1103/physrevb.91.085205
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Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

Abstract: The doping mechanism of 2, 3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4TCNQ) doped poly(3-hexylthiophene) (P3HT) thin films and solutions is studied by UV-visible and IR absorption spectral analysis. We show that integer charge transfer between the two molecules is observed in this system with 63% of the dopants producing a fully transferred charge in thin film. The primary P3HT doped species in solution and thin film are shown to be bipolarons and polarons, respectively. The absorption signature… Show more

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Cited by 118 publications
(192 citation statements)
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“…Importantly, this mobility is directly comparable with the one from the simulations discussed above. In the case of integer CT with (nearly) unity efficiency, as has been observed for the P3HT:F 4 TCNQ system [8,17,27], this is the actual mobility averaged over all charge carriers.…”
Section: E Experimentsmentioning
confidence: 67%
See 1 more Smart Citation
“…Importantly, this mobility is directly comparable with the one from the simulations discussed above. In the case of integer CT with (nearly) unity efficiency, as has been observed for the P3HT:F 4 TCNQ system [8,17,27], this is the actual mobility averaged over all charge carriers.…”
Section: E Experimentsmentioning
confidence: 67%
“…with ν 0 as the attempt-to-hop frequency and n as the charge carrier density that is set equal to the doping concentration N d −, i.e., full integer charge transfer (CT) is assumed [8,17,27]. For both the analytical models and MC, mobilities are calculated from conductivities by dividing by the dopant concentration, giving the mean mobility for all available charges.…”
Section: A Model Descriptionmentioning
confidence: 99%
“…Finally, P3BT decomposed slowly from ≈320 °C onward (because of the degradation of lighter fragments such as CS units) and rapidly from ≈430 °C onward (because of the degradation of both the backbone and the side chain, sulfur oxidation, etc.) . The weight loss profile of the SIS/P3BT/BCF composite was obviously the sum of those of the three constituent materials, indicating that the composite was a blended mixture of SIS, P3BT, and BCF, as illustrated in Figure d.…”
Section: Resultsmentioning
confidence: 93%
“…It should be noted that the neat BCF peak was not overlapped with any of the peaks in Figure b (Figure S2, Supporting Information). Given that two polaron peaks and a bipolaron peak of poly(3‐hexylthiophene) were positioned at 775.6, 867.8, and 761.35 nm, respectively, the broad absorption band from ≈750 to ≈1000 nm might have resulted from the formation of polarons and bipolarons in P3BT. However, it was difficult to clearly deconvolute the absorption band because the polaron and bipolaron peaks overlapped with the spectral features owing to the formation of a Lewis acid–base complex, water‐reactive adduct ((C 6 F 5 ) 3 B(OH 2 )), and other BCF‐related products .…”
Section: Resultsmentioning
confidence: 99%
“…9−19 In P3HT:F4TCNQ, for reasons not yet fully understood, only about 5% of the holes injected by dopants actively contribute to charge transport 9 (that is, p free ≪ p bound ), even though nearly all F4TCNQ molecules in the film are fully ionized. 15 Therefore, relevant doping levels in OSCs are much higher, ranging from ppt to well over 100 wt % in commercial formulations of PEDOT:PSS (poly(3,4-ethylenedioxythiophene)polystyrenesulfonate), another widely used polymer:dopant blend. Clearly, with such high doping levels required, compensation doping is not a feasible approach to fabricating homojunctions in organic semiconductors.…”
Section: ■ Introductionmentioning
confidence: 99%