2004
DOI: 10.1007/s00339-004-2941-2
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Femtosecond laser micromachining of grooves in silicon with 800 nm pulses

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Cited by 107 publications
(69 citation statements)
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“…The microchannel width W M and microchannel depth H M of both polyamides increase gradually with increasing laser power, and thus the width of un-fabricated surface (no laser irradiation area) decreases. These results are the same tendencies as the microchannels on the 040002-2 silicone by Crawford et al 12) and the PTFE by Naruse et al 8) . The size of microchannels is closely related to the energy density, which is the multiplication of laser power and laser speed.…”
Section: Resultssupporting
confidence: 78%
“…The microchannel width W M and microchannel depth H M of both polyamides increase gradually with increasing laser power, and thus the width of un-fabricated surface (no laser irradiation area) decreases. These results are the same tendencies as the microchannels on the 040002-2 silicone by Crawford et al 12) and the PTFE by Naruse et al 8) . The size of microchannels is closely related to the energy density, which is the multiplication of laser power and laser speed.…”
Section: Resultssupporting
confidence: 78%
“…While laser pulses with a duration in the nanosecond regime offer good micromachining speeds for silicon and metals and, under the right conditions, can be used to ablate wider bandgap dielectrics [16][17][18][19][20], they produce a large heat-affected zone (HAZ) and droplets in and around the ablated area.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, the thermal penetration depth of femtosecond pulses is very small, leading to a minimized volume in which energy is deposited by each pulse [19][20][21][22][23][24][25]. Unfortunately, femtosecond laser systems are 2 more expensive than nanosecond systems of matching ablation performance (in terms of material removed in unit time).…”
Section: Introductionmentioning
confidence: 99%
“…This configuration seemed to be a good compromise between minimal kerf widths and practicable focal depth. The polarization of the laser beam was oriented perpendicular to the scan direction for cutting the sides being bended in the bending test experiments, because numerous studies have already demonstrated that cuts become straighter and the surface quality of the sidewalls is higher under this condition [16,20,21]. It should be noted that the orientation of the polarization with respect to the scan direction changed as the chips were cut in the other two directions.…”
Section: Methodsmentioning
confidence: 99%
“…This could be related to the following phenomena. Self-organizing periodic holes arise during scribing of Si [16,17], which cause periodic kerfs at the lower sidewalls and backside after cutting the chips. The kerfs act as stress concentrators, which reduces the breaking strength of the chip backside [6,8,18].…”
Section: Introductionmentioning
confidence: 99%