Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics

Mann, Guido; Krüger, Jörg; Marcinkowski, Manja; Eberstein, Markus

doi:10.1016/j.tsf.2013.07.005

Cited by 36 publications

(24 citation statements)

References 21 publications

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“…On the other hand, a clear crater‐like contact hole with a bright yellow central region is observed at pulse energy of 32 μJ. This bright appearance of the irradiated spots, compared with the non‐irradiated surface, indicates complete opening of the SiO 2 /SiN x layers stack . Furthermore, the appearance of the central crater region turns into a silver‐gray color at the pulse energy of 56 μJ, in conjunction with a darker ring inside of the ablated region.…”

Section: Resultsmentioning

confidence: 94%

“…Figure 3 displays the optical micrographs of vias formed by various pulse energies. It clearly shows that higher laser pulse energy results in [14,16]. Furthermore, the appearance of the central crater region turns into a silvergray color at the pulse energy of 56 μJ, in conjunction with a darker ring inside of the ablated region.…”

Section: Effect Of Laser Pulse Energy On the Formation Of Vias And Immentioning

confidence: 91%

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20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

Tao

Payne

Upadhyaya

et al. 2014

Progress in Photovoltaics

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In this work, we report on ion-implanted, high-efficiency n-type silicon solar cells fabricated on large area pseudosquare Czochralski wafers. The sputtering of aluminum (Al) via physical vapor deposition (PVD) in combination with a laserpatterned dielectric stack was used on the rear side to produce front junction cells with an implanted boron emitter and a phosphorus back surface field. Front and back surface passivation was achieved by thin thermally grown oxide during the implant anneal. Both front and back oxides were capped with SiN x , followed by screen-printed metal grid formation on the front side. An ultraviolet laser was used to selectively ablate the SiO 2 /SiN x passivation stack on the back to form the pattern for metal-Si contact. The laser pulse energy had to be optimized to fully open the SiO 2 /SiN x passivation layers, without inducing appreciable damage or defects on the surface of the n + back surface field layer. It was also found that a low temperature annealing for less than 3 min after PVD Al provided an excellent charge collecting contact on the back. In order to obtain high fill factor of~80%, an in situ plasma etching in an inert ambient prior to PVD was found to be essential for etching the native oxide formed in the rear vias during the front contact firing. Finally, through optimization of the size and pitch of the rear point contacts, an efficiency of 20.7% was achieved for the large area n-type passivated emitter, rear totally diffused cell.

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Section: Resultsmentioning

confidence: 94%

Section: Effect Of Laser Pulse Energy On the Formation Of Vias And Immentioning

confidence: 91%

20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

Tao

Payne

Upadhyaya

et al. 2014

Progress in Photovoltaics

View full text Add to dashboard Cite

show abstract

“…By linewise meandering movement of the sample under the focused laser beam (scan velocity v x = 0.145-0.365 mm/s, line-offset Δy = 0.015-0.05 mm), areas from 2 × 2 to 8 × 8 mm 2 were processed. At these conditions, the effective number of laser pulses per focused laser spot diameter D = 2w 0 (for a single laserprocessing pass) accounted to N eff = (D × f)/v x [33] in the scan direction. These processing parameters corresponded to a laser peak fluence of ϕ 0 ∼ 3.0 J/cm 2 along with an effective number of laser pulses of N eff ∼ 400.…”

Section: Laser-induced Microstructure Formation On Ti Substratesmentioning

confidence: 99%

Femtosecond laser-induced microstructures on Ti substrates for reduced cell adhesion

et al. 2017

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“…Moreover, micro-processing via laser allows us to fabricate semiconductor films under ideal conditions and then pattern a large area, which otherwise would require multiple invasive and complicated steps. Similar laser-based lithographic techniques have gained significant interest as an alternative approach to patterning metallic and dielectric materials with minimal contact [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63].…”

Section: Introductionmentioning

confidence: 99%

“…In addition to materials that have fundamental optical bandgaps with energies lower than the photon energies, materials that are transparent at the laser wavelength can be machined via non-linear absorption. Previous applications of picosecond lasers in micromachining are in medical technology, anti-icing thin-films, optical filters, and circuit components [44][45][46][47][48][49][50][51]. Engelhardt et al, for example, investigated the fundamental processing properties of picosecond laser radiation on stainless steel, alumina, poly(methyl methacrylate), and quartz glass [52].…”

Section: Introductionmentioning

confidence: 99%

Device Isolation in Hybrid Field-Effect Transistors by Semiconductor Micropatterning Using Picosecond Lasers

et al. 2014

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A solid-state picosecond laser is used to ablate semiconductor thin films in spatially localized areas, providing an alternative to device isolation strategies based on chemical or ion etching techniques. Field-effect transistors (FET) of emerging organic and inorganic materials often utilize continuous semiconductor film and an array of top-contact electrodes. Electrically isolating individual FET components from other circuit elements is essential in order to reduce parasitic capacitances and unwanted current pathways, in order both to improve device performance and to enable the observation of new or enhanced physical phenomena. We pattern FET arrays with ultrafast pulse duration (1.5 ps) and low fluence (0.09 J cm-2) optical pulses using the fundamental wavelength (1030 nm) of an Yb-YAG laser. We investigate two representative semiconductor materials. First, zinc oxide (ZnO) is deposited onto Si/SiO 2 substrates by sol-gel methods and used to create n-channel FETs with aluminum top electrodes. Isolation of individual FETs enables the clear observation of photomodulation of the FET device parameters via photoinduced electron donation from an adsorbed chromophore. The second system comprises thin-film bilayers of tellurium and organic semiconductor molecules sequentially vapor-deposited onto Si/SiO 2 substrates, with gold electrodes deposited last. Charge carrier mobility is maintained for devices isolated by picosecond lasers, but leakage currents through the FET dielectric are drastically reduced.

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Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics

Cited by 36 publications

References 21 publications

20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

Femtosecond laser-induced microstructures on Ti substrates for reduced cell adhesion

Device Isolation in Hybrid Field-Effect Transistors by Semiconductor Micropatterning Using Picosecond Lasers

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