Features of sputtering of nitrides with various component mass ratios

Promokhov, A. A.; Mosunov, A. S.; Elovikov, S. S.; Yurasova, V. E.

doi:10.1016/s0042-207x(00)00123-8

Cited by 19 publications

(9 citation statements)

References 18 publications

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“…This means that the preferential sputtering of nitrogen is higher for a low incidence angle. This feature may be explained by the interplay of two effects: energy and momentum transfer from the incident ions to target atoms, as suggested by Promokhov et al,9 who studied the mechanism of the sputtering of nitrides with different mass ratios by computer simulation. They found that under normal ion incidence the momentum transfer is crucial.…”

Section: Discussionmentioning

confidence: 90%

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Surface composition changes in GaN induced by argon ion bombardment

Kovač¹,

Zalar²

2002

Surface & Interface Analysis

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The wide-bandgap GaN semiconductor has been used to fabricate efficient blue-green light-emitting diodes, laser diodes and high-power/high-temperature electronic devices since the many problems regarding the life-time characteristics were resolved in recent years. Knowledge of ion-bombardmentinduced surface composition changes is important in quantitative AES/XPS analysis.We investigated the dependence of preferential sputtering of components on ion energies and on the angle of incidence of argon ions. Thin films of GaN prepared on a smooth Si substrate and GaN single crystals were bombarded with argon ions of energy 0.5-5 keV at incidence angles of 10-72• with respect to the surface normal. The N KLL and Ga LMM AES signals were acquired after the steady-state surface composition was reached. The results show that nitrogen is sputtered preferentially. This effect is more pronounced for higher ion energies and smaller incidence angles. The experimental results are discussed in the framework of models of preferential sputtering and compared with computer simulations.

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Section: Discussionmentioning

confidence: 90%

“…(2). 9 The mechanism of momentum transfer of ions at small angle of incidence relative to the surface normal is expected to be responsible for the higher sputtering yield of nitrogen in the energy range 300 eV-10 keV.…”

Section: Introductionmentioning

confidence: 99%

Surface composition changes in GaN induced by argon ion bombardment

Kovač¹,

Zalar²

2002

Surface & Interface Analysis

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“…Following that, the value was adjusted using the data in ref. [33] and comparing them with the experimental results [16,18,23,34]. The final values of E b amounted to 8.1, 6.8, and 5.4 eV for BN, AlN, and GaN, respectively.…”

Section: Computer Simulation Methodsmentioning

confidence: 88%

“…That is why it is essential to be aware of radiationdamage stability of both nitrides and their components. Research upon nitride sputtering was commenced rather recently [16][17][18][19][20][21][22][23], and it is continued in this study.…”

Section: Introductionmentioning

confidence: 99%

Features of sputtering of nitrides and their components

Mosunov

Ryzhov

Shkarban

et al. 2007

Radiation Effects and Defects in Solids

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The sputtering behaviour of hexagonal or wurtzite polycrystal nitrides of boron, aluminium, and gallium was explored employing methods of molecular dynamics. The sputtering yield Y of nitrides and the average energyĒ 1 of emitted particles were studied as dependent on the mass m 1 of bombarding He, Li, B, N, Ne, Al, Ar, Ni, Ga, Kr, and Xe ions with the initial energy E 0 between 200 and 10,000 eV. Y (m 1 ) andĒ 1 (m 1 ) were researched upon for preferential sputtering of nitride components at low E 0 . It was revealed that the ratio between the sputtering yield of the light component and that of the heavy one depends on ion energy and mass. At E 0 = 200 eV and m 1 = 40, the ratio for BN, AlN, and GaN amounts to 1.2, 2.2, and 2.4, respectively. For nitride components, an anomalous dependence of sputtering on ion mass was found, its maximum occurring at a certain ratio m 2 /m 1 , where m 2 is the averagè mass of two nitride components.

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“…Some groups performed molecular dynamic simulations to determine threshold energies for ion impact induced lattice displacements of gallium and nitrogen atoms [17,18] as well as energy thresholds for sputtering [19,20,25]. Most of the studies were performed with argon ions [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] but there are rarely investigations using nitrogen ions [31][32][33][34][35][36][37][38]. As can be derived from Table 1, no ion irradiation experiments of GaN were performed in the hyperthermal nitrogen ion energy regime <60 eV.…”

Section: Introductionmentioning

confidence: 99%