Feasibility Study of ZnO/Ge Bilayer Recording Medium in Blue Laser Recordable Disc

Abstract

We consider the polarization of unstable type-IIB D0-branes in the presence of a background five-form field strength. This phenomenon is studied from the point of view of the leading terms in the non-abelian Born Infeld action of the unstable D0-branes. The equations have SO(4) invariant solutions describing a non-commutative 3-sphere, which becomes a classical 3-sphere in the large-N limit. We discuss the interpretation of these solutions as spherical D3-branes. The tachyon plays a tantalizingly geometrical role in relating the fuzzy S 3 geometry to that of a fuzzy S 4 .

Phase-Change Kinetics of Bi–Fe–(N) Layer for High-Speed Write-Once Optical Recording

“…Table III shows a summary of the T x 's and activation energies (E a and/or ÁH) of phase transitions for various recording media reported previously. [6][7][8][15][16][17][18][20][21][22][23][24][25][26][27][28][29][30] Note that the T x of the Bi-Fe-(N) system is listed at a temperature about 270 C since an extremely high heating rate of laser irradiation leads to the similarity of the T x of Bi-Fe-(N) system to T Bi m . As shown in Table III, the T x of the Bi-Fe-(N) system is comparatively lower than those of bilayer media, but higher than those of phase-change materials.…”

“…At present, recording materials compatible with blue-laser recording are of particular interest. For such materials, organic ones are dyes that are sensitive to blue irradiation while inorganic ones include phase-change-based alloys, 5,6) AgInSbTe-SiO 2 nanocomposite films, 7,8) single layer metals such as AlSi alloys, 9,10) bismuth oxide (BiFeO) [11][12][13] and Bi-Fe-(N) layer, 14) and bilayer metals such as Ge/Au, [15][16][17][18] Cu/Si, 19) ZnO/Ge, 20) amorphous silicon (a-Si)/Cu, [21][22][23][24] a-Si/Al, 24,25) a-Si/Ni, [26][27][28] and Bi/Ge. 29,30) In our previous study, 14) the Bi-Fe-(N) system was demonstrated to be a promising medium for high-density write-once recording.…”

ZnO/ITO core/shell nanostructure electrodes for future prototype solar cell devices

“…For example, Sungjee Kim et al have synthesized both Type-I as well as Type-II quantum dot (QD) structures and observed good quantum yield enhancement in Type-I structures (20%), and shrinkage in Type-II structures (4%). 4 In this direction, a variety of heteronanostructures including InAs/InP, 5 InAs/CdSe, 6 CdSe/CdS, 7,8 CdSe/CdS/Zn 0.5 Cd 0.5 S/ZnS, 9 Si/ZnO, [10][11][12] Si/SiGe, 13,14 GaAs/ GaP, 15,16 TiO 2 /SnO 2 , 17,18 ZnO/Ge, [19][20][21] and CdSe/Si 22 structures have been synthesized by using multidisciplinary methods, and their interesting physical and chemical properties were explored. On the other hand, a few groups have also fabricated PV devices using various heteronanostructures and noticed considerable light conversion efficiency.…”