IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society 2013
DOI: 10.1109/iecon.2013.6700115
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Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applications

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Cited by 17 publications
(9 citation statements)
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“…Their utilization allows higher switching frequency, however attention should be paid to the gate driver design and minimization of parasitic elements of the power circuit [33]- [35]. As modern SiC MOSFETs have proved their performance in high-voltage applications [36]- [40], they can be used in the synchronized VDR on the high voltage side. An appropriate selection of new wide-bandgap semiconductors and analysis of the benefits achieved along with economic concerns require additional research and development of new design guidelines.…”
Section: B Recent Development Trendsmentioning
confidence: 99%
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“…Their utilization allows higher switching frequency, however attention should be paid to the gate driver design and minimization of parasitic elements of the power circuit [33]- [35]. As modern SiC MOSFETs have proved their performance in high-voltage applications [36]- [40], they can be used in the synchronized VDR on the high voltage side. An appropriate selection of new wide-bandgap semiconductors and analysis of the benefits achieved along with economic concerns require additional research and development of new design guidelines.…”
Section: B Recent Development Trendsmentioning
confidence: 99%
“…practical regulation range. Flat efficiency curve at high switching frequency can be achieved in the "full-SiC" implementations [40]. Further improvement in the group of push-pull based converters is possible through magnetic coupling of qZS networks [65].…”
Section: Quasi-z-source (Qzs)mentioning
confidence: 99%
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“…In [10],designed a push-pull DC/DC converter achieved 93% peak efficiency developed for the HF isolation stage for a 1.3kW and operating frequency of 100kHz for PMSG-based wind turbines. However, no study has yet demonstrated the benefits of utilizing SiC in 2L-FB grid-side inverter based on 1200V SiC-MOSFETs module to improve the efficiency and achieve higher switching frequencies and power densities due to reducing the sizes of the passive elements and heatsink, neither optimized the heatsink design based on the wind speed distribution profile (i.e., in most works, the heatsink is designed based on the maximum operating output power).…”
Section: Introductionmentioning
confidence: 99%
“…However, few work has been done on the impact of SiC technology in small-scale wind energy. In [6], designed qZS-derived push-pull DC/DC converter in the boost stage of small-scale wind conversion system based on SiC MOSFETs, higher efficiency at high switching frequency is achieved. Our recent work, [7], reported the improvements that could be brought by SiC MOSFETs in small-Scale wind energy conversion system, the 2L-FB grid inverter presented higher efficiency especially at partial loads in the area of high wind speed distribution.…”
Section: Introductionmentioning
confidence: 99%