Optimization of thermal management and power density of small-scale wind turbine applications using SiC-MOSFETs

Abstract

A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk Optimization of Thermal Management and Power Density of Small-Scale Wind Turbine Applications using SiC-MOSFETsAbdallah Hussein, and Alberto CastellazziThe University of Nottingham Power Electronics, Machines and Control (PEMC) Group Nottingham, UK E-mail:eexash@nottingham.ac.uk Abstract-This paper presents an optimized design of 12kW 2L-FB inverter for small-scale wind turbine, taking into account some specific behavioral features of SiC power MOSFETs. Power converters used in renewable energy conversion have to deal with intermittent and variable power availability from the source, which implies that they actually work at their maximum rated power for only a small fraction of their operational time. Still, traditional thermal management design of power modules has to refer to maximum load conditions. SiC-MOSFETs exhibit a very stable performance over a broad temperature range [1-3]; this feature enables to design the cooling device for nominal operational conditions, typically corresponding to a much lower than maximum power rating. When this capability is added to the decrease in the size of passive filter elements, which can be gained by the higher switching frequency capability of SiC MOSFETs, the result is a significant increase of the converter powe, density.

Leveraging Silicon Carbide Power Semiconductor Devices for Renewable Energy Applications

“…SiC devices are significantly more resilient to high temperatures than their silicon counterparts [14]. This feature is critical for applications where temperature variations are frequent, such as renewable energy systems, electric vehicles (EVs), and aerospace [6,7].…”

“…These advancements will enable the cost of solar energy to approach that of conventional energy sources. Other uses for the highly efficient and reasonably priced SiC-based system include hybrid cars and wind power [6,7].…”

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

“…The issue has already found attention in dedicated research efforts, which successfully proposed the use of load-dependent variable frequency switching schemes, coupled with variable inductor design to boost low-load performance while still complying with harmonic performance requirements (THD and TCC) [7,8,14]. However, because of an added complication with the close-loop control and stability of the inverter, presently, alternative solutions based on a modular assembly with load-dependent, dynamic equivalent, semiconductor area scaling are being pursued.…”

“…The higher initial price of the semiconductors is counter-balanced by savings in the filter elements and cooling, as well as by the possibility to do without free-wheeling diodes even in higher-voltage applications. The issue of reduced performance at low-load conditions emerges as a connoting feature of WBG technology operated at high frequencies, which requires careful and dedicated attention, with a perspective shift in power converter performance assessment from power to energy efficiency, taking into account the most probable operational load conditions [7,8]. Incremental improvement on standard power module assembly technology is proven sufficient to enable significant application gains, up to and including the 3.3 kV voltage class [9,10].…”

Comprehensive design optimization of a wind power converter using SiC technology

“…9 b), on the other hand, shows a final very important result: the maximum value up to which it makes sense to increase the heat-sink temperature is limited at about 240-245 °C; beyond this value, the increase in semiconductor losses becomes a limiting factor and no further heat-sink volume shrinkage is viable. These results base on a physical semiconductor device model validated up to very high temperatures [7].…”