2011
DOI: 10.4028/www.scientific.net/amr.254.70
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FBAR Resonators with Sufficient High Q for RF Filter Implementation

Abstract: Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE) vibration mode. The FBAR resonator has a quality factor of about 400 and the piezoelectric coupling coefficient of 4.25%, which is critical for RF filter implementation. Moreover, FBAR resonator has been designed to suppress spurious modes in order to ensure higher… Show more

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Cited by 11 publications
(9 citation statements)
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“…The average Q -value of the back-trench FBARs is about 493, while that for the FBARs on the PI support layer is about 470, which are comparable to each other. The performance of the two FBAR architectures is similar, and also is comparable to previously-reported results 40 41 .…”
Section: Resultssupporting
confidence: 88%
“…The average Q -value of the back-trench FBARs is about 493, while that for the FBARs on the PI support layer is about 470, which are comparable to each other. The performance of the two FBAR architectures is similar, and also is comparable to previously-reported results 40 41 .…”
Section: Resultssupporting
confidence: 88%
“…The development of compact, low cost, high-performance resonators is meant to respond to the growing demand of single-chip, highly integrated sensor (arrays) for (bio)­chemical sensing applications, and multiband radio frequency (RF) solutions for advanced wireless communication systems. Micro- and nanoelectromechanical (MEMS/NEMS) resonators for sensor and RF applications have been widely explored because of their small size, light weight, low loss, and high IC integration capability. Recently, the development of nanomaterials such as nanotubes, , nanowires, graphene, and other 2D nanomaterials, have opened new research interests in MEMS/NEMS resonator design and fabrications. In any case, micro/nano fabricated resonators are designed to work at appropriate frequency for specific applications.…”
Section: Introductionmentioning
confidence: 99%
“…Besides, resonator sensor arrays need to work at the same resonant frequency to simplify the test system in applications such as real-time multiplexed sensing . In the field of RF wireless communication, resonators are widely integrated into very large scale integrated circuits (VLSI) as filters, oscillators, phase locking loops (PLL) and other electronic components, all of them are supposed to operate at a given frequency in accordance with the peripheral circuit or communication protocol. ,, However, due to the variations in semiconductor fabrication processes, micro/nano fabricated resonators are prone to deviate from the desired working frequency and could have large resonant frequency distribution at wafer scale (see Supporting Information). The solution leads to the technique of “frequency tuning” which normally requires multisteps of semiconductor fabrications to adjust the thickness of the resonators.…”
Section: Introductionmentioning
confidence: 99%
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