2014
DOI: 10.1021/am507640g
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Tuning the Resonant Frequency of Resonators Using Molecular Surface Self-assembly Approach

Abstract: In this work, a new method to tune the resonant frequency of microfabricated resonator using molecular layer-by-layer (LbL) self-assembly approach is demonstrated. By simply controlling the polymer concentration and the number of layers deposited, precisely tuning the frequency of microfabricated resonators is realized. Due to its selective deposition through specific molecular recognitions, such technique avoids the high-cost and complex steps of conventional semiconductor fabrications and is able to tune ind… Show more

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Cited by 23 publications
(24 citation statements)
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“…More recently, Liu et al . [ 382 ] presented a new method to tune the resonant frequency of microfabricated film bulk acoustic resonator (FBAR) using molecular layer-by-layer (LbL) self-assembly approach for wireless broadband communication, as shown in Figure 35 . The maximum resonant frequency shift of FBAR reaches more than 20 MHz, meaning 1.4% tunability at least.…”
Section: Passive Frequency Tuning Methodsmentioning
confidence: 99%
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“…More recently, Liu et al . [ 382 ] presented a new method to tune the resonant frequency of microfabricated film bulk acoustic resonator (FBAR) using molecular layer-by-layer (LbL) self-assembly approach for wireless broadband communication, as shown in Figure 35 . The maximum resonant frequency shift of FBAR reaches more than 20 MHz, meaning 1.4% tunability at least.…”
Section: Passive Frequency Tuning Methodsmentioning
confidence: 99%
“… Frequency tuning of microresonator using molecular LbL self-assembly approach reported by Liu et al . [ 382 ]. Optical microscope images of the FBAR filter ( a ) before and ( b ) after LbL assembly.…”
Section: Passive Frequency Tuning Methodsmentioning
confidence: 99%
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“…Device Fabrication: In this work, film bulk acoustic resonators (FBARs) were fabricated using standard microfabrication according to a previous published process (see also Supporting Information) 40. The series resonant frequency signal of FBAR was obtained by network analyzer Device Functionalization: The aluminium nitride (AlN) substrates and FBAR sensors were oxidized in air plasma for 5 min to form hydrophilic interface with plasma cleaner.…”
mentioning
confidence: 99%
“…The 4.44 GHz FBARs in this work (shown in Fig. S8 ) were conveniently fabricated by a standard MEMS fabrication process as described before 53 . In brief, an air cavity was initially generated on a single-side polished silicon wafer by deep reactive ion etching (DRIE).…”
Section: Methodsmentioning
confidence: 99%