2014
DOI: 10.1038/srep04506
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Fatigue degradation and electric recovery in Silicon solar cells embedded in photovoltaic modules

Abstract: Cracking in Silicon solar cells is an important factor for the electrical power-loss of photovoltaic modules. Simple geometrical criteria identifying the amount of inactive cell areas depending on the position of cracks with respect to the main electric conductors have been proposed in the literature to predict worst case scenarios. Here we present an experimental study based on the electroluminescence (EL) technique showing that crack propagation in monocrystalline Silicon cells embedded in photovoltaic (PV) … Show more

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Cited by 86 publications
(61 citation statements)
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References 21 publications
(33 reference statements)
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“…The proposed method is applied to pre-cracked monocrystalline Si cells embedded in semi-flexible modules made of 2 rows of 5 cells (see [8] for more details). Loaded and unloaded conditions have been considered in order to change the stress field in the cells.…”
Section: Generalization Of the Electric Model In Case Of Cracksmentioning
confidence: 99%
See 1 more Smart Citation
“…The proposed method is applied to pre-cracked monocrystalline Si cells embedded in semi-flexible modules made of 2 rows of 5 cells (see [8] for more details). Loaded and unloaded conditions have been considered in order to change the stress field in the cells.…”
Section: Generalization Of the Electric Model In Case Of Cracksmentioning
confidence: 99%
“…According to this pure geometrical criterion which does not take into account neither physical mechanisms such as thermo-mechanical deformation, nor the fact that the cells are embedded in the composite PV module, worstcase scenarios have been predicted by considering all the experimentally detected [2] or numerically simulated [7] cracks as perfectly insulated lines. In reality, it is reasonable to expect intermediate configurations where cracks may partially conduct depending on the relative crack opening displacement at crack faces [8].…”
Section: Introductionmentioning
confidence: 99%
“…12b). Such cracks are very harmful, since their electric resistance may increase under the action of mechanical loading and degrade with time due to thermoelastic effects [21][22][23].…”
Section: F Advanced Diagnostic Techniquesmentioning
confidence: 99%
“…By reducing the thickness of the Si wafer it is still possible to fabricate semiflexible modules with high efficiency (B15-20%); however, bending radius o10 cm induces damage to the module. 69 To overcome the brittleness of large Si crystalline wafers, new concepts have been developed. The Si wafer is structured in very thin (1-2 mm) electrically-interconnected stripes allowing to dramatically reduce the bending radius to the cm scale without large decreases in PCE (module efficiency B18.3%).…”
Section: View Article Onlinementioning
confidence: 99%