Fast switching lateral insulated gate transistor

Gough, P.A.; Simpson, M.; Rumennik, V.

doi:10.1109/iedm.1986.191153

Cited by 66 publications

(10 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the unidirectional switch characteristic requires the conventional LIGBT connecting in anti-parallel with a diode to conduct the reverse current, which introduces stray inductance and the extra chip area [4]- [5] . The usage of the shorted anode (SA) LIGBT, instead of the conventional LIGBT with an antiparallel diode in the switching modules, proves to be an effective method to address drawbacks as motioned above [6]- [8] . Meanwhile, the introduced N+ anode in the SA LIGBT also provides an electron extraction path and avoids the long current tail during turn-off, resulting in a small turn-off loss.…”

Section: Introductionmentioning

confidence: 99%

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

Yang

Wei

Dai

et al. 2021

Preprint

View full text Add to dashboard Cite

A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P+ anode electrode of RC-LIGBT and the other side is connected to the N+ anode via a floating ohmic contact. The adaptively turn-on/off of the ISM contributes to improve the static and dynamic performance of the ISM RC-LIGBT. In the forward-state, due to the off-state of the ISM, the snapback could be effectively suppressed without requiring extra device area compared with the SSA (separated shorted anode) and STA (segmented trenches in the anode) LIGBTs. In the reverse conduction, the ISM is turned on and the parasitic NPN in the ISM is punched through, which provides a current path for the reverse current. Meanwhile, during the turn-off and reverse recovery states, the ISM turns on, providing a rapid electron extraction path. Thus, a superior tradeoff between the on-state voltage drop (Von) and turnoff loss (Eoff) as well as an improved reverse recovery characteristic can be obtained. Compared with the STA device, the proposed ISM RC-LIGBT reduces Eoff by 21.5% without snapback. Its reverse recovery charge is reduced by 53.7%/58.6% compared to that of the SSA LIGBT with Lb=40/60μm at the same Von. Due to the prominent static and dynamic characteristic, the power loss of ISM RC-LIGBT in a completed switching cycle is reduced.

show abstract

Section: Introductionmentioning

confidence: 99%

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

Yang

Wei

Dai

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…As a unidirectional device, the conventional LIGBT needs an antiparallel diode in various power applications to conduct reverse current, which induces extra cost and parasitic effects [3]. The shorted-anode LIGBT implements reverse-conducting by introducing an N + region in the anode side of the LIGBT, which undesirably leads to the snap-back effect in the forward-conducting state [4], [5]. Some methods have been reported to suppress the snap-back problem [6]- [9] by increasing the resistor for the electron current from the N + anode to the P + anode, which causes a higher on-state voltage drop (V on ) compared with that of the conventional LIGBT.…”

Section: Introductionmentioning

confidence: 99%

A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

Huang

et al. 2019

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M N2 ) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LIGBT to be turned off rapidly without excessive tail current. In addition, M N2 enable the LIGBT to conduct the reverse conducting current like the freewheeling diode. In the forward-conducting state, M N2 is turned off, then the proposed LIGBT operates like a conventional one and the snap-back is avoided. The gate electrode of M N2 can be controlled synchronously by the gate signal of the LIGBT which is level-shifted by a p-i-n diode (D 1 ) and processed by an anode-controlling circuit, and therefore, the proposed RC-LIGBT still maintains a three-terminal configuration. D 1 and M N2 are embedded in the drift region and anode-side of the LIGBT, respectively, and they can be isolated by deep-oxide trenches. The numerical simulation results reveal that the turn-off loss (E off ) and reverse recovery charge of the proposed LIGBT is reduced by 58.3% and 38.9%, respectively, compared with the conventional LIGBT combining with antiparallel freewheeling diode.INDEX TERMS RC-LIGBT, snapback-free, turn-off loss, reverse recovery charge.

show abstract

“…Incorporating anode shorts in a lateral IGBT, in the case of an n-type device formed by shorting the anode p injector, improves switching performance without resorting to lifetime killing. The shorted injector reduces the gain of the pnp transistor degrading the injection of minority carries into the drift region and provides a path to remove the electrons in the plasma as the depletion region expands at turnoff [7], [8]. However, the voltage snapback which arises at the turn on of the anode p n-drift junction can lead to unstable switching.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of the dual-gate inversion layer emitter transistor

Udugampola

McMahon

Udrea

et al. 2005

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The dual-gate inversion layer emitter transistor (DGILET) is a device in which the injection of minority carriers takes place from an inversion layer formed under a MOS gate. Therefore, the device can be switched between MOS and bipolar modes using the gate giving the means to achieve a superior combination of low conduction losses and low switching losses. The structure of the device and operation in both the unipolar and bipolar modes are described in detail. Devices have been fabricated on bulk silicon wafers using junction isolation and experimental results confirm the expected superior performance. In particular, the results confirm predictions that if the inversion layer injector is properly designed, the voltage snapback that occurs during the transition between unipolar and bipolar modes can be completely suppressed. This can be achieved with a compact structure in contrast to the extended structures required in anode-shorted lateral insulated gate bipolar transistor (LIGBTs). An equivalent circuit for the DGILET is presented and the control of the minority carrier injection is also analyzed. Experimental results show that the DGILET can switch at speeds approaching those characteristic of MOSFETs with operating current densities comparable to LIGBTs. The results show that the DGILET offers lower overall losses than an LIGBT at switching frequencies above about 10 kHz.Index Terms-Anode short, dual-gate, inversion layer, lateral insulated gate bipolar transistor (LIGBT), power integrated circuits (PIC), snapback.

show abstract

Fast switching lateral insulated gate transistor

Cited by 66 publications

References 4 publications

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

Analysis and design of the dual-gate inversion layer emitter transistor

Contact Info

Product

Resources

About