Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-Regions

Wei, Jie; Dai, Kaiwei; Yang, Kemeng; Zhu, Pengchen; Li, Jie; Li, Zhaoji; Zhang, Chao; Luo, Xiaorong

doi:10.1109/ted.2022.3232588

Cited by 4 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reverse conducting lateral insulated gate bipolar transistor (RC-LIGBT) not only has superior trade-off relationship between the on-state voltage drop (V on ) and the turnoff energy loss (E off ), but also achieves free-wheeling property, which integrates the LIGBT and a free-wheeling diode (FRD) [1][2][3]. Therefore, the RC-LIGBT is an extremely promising power device in the smart power integrated circuits and highpower integrated circuits [4][5][6][7]. Although the conventional shorted-anode (SA) LIGBT obtains the above abilities, it still exists the unwelcome snapback phenomena, which has seriously affected the application in the parallel operations [8].…”

Section: Introductionmentioning

confidence: 99%

A Snapback-Free Reverse-Conducting LIGBT with Embedded MOS Controlled Diode

Qin,

Li,

et al. 2023

Advances in Transdisciplinary Engineering

View full text Add to dashboard Cite

In this paper, a novel snapback-free reverse-conducting lateral insulated-gate bipolar transistor with embedded MOS controlled diode is proposed and investigated by the numerical TCAD Simulation. The proposed reverse conducting LIGBT features an embedded MOS controlled diode which provides reverse conduction path when the gate voltage of MOS controlled diode is greater than those of threshold voltage. The collector and floating ohmic contact are shorted by the PN junction above the MOS controlled diode gate oxide layer, which provides a current path for carriers in the forward-conducting and turn off modes. Compared with the Separated Shorted-Anode LIGBT (SSA LIGBT), the snapback voltage (ΔVSB) of the proposed LIGBT is not only completely eliminated, but also decreases collector size. The simulation shows that the turn-off loss of the proposed LIGBT, under the same forward voltage drop (Von∼1.38 V), reduces 66.4% and 44.2% for the SSA LIGBT and conventional LIGBT (CON LIGBT), respectively. In addition, the short-circuit withstand and reverse recovery capabilities are obviously improved by the MOS controlled diode.

show abstract