2021
DOI: 10.1007/s40843-021-1796-6
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Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer

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Cited by 9 publications
(7 citation statements)
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References 32 publications
(20 reference statements)
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“…Electroluminescence is received by the photodetector for postsynaptic brightness (PSB) detection. Hybrid quantum dots (QDs) used in the light-emitting layer can emit light of specific color in response to electric field 7 , 50 53 , and the emission color can be changed by varying the magnitude of the electric field. Based on this, SMPS with synapse-like and multi-wavelength light output can be realized by tuning the electric field intensity generated by the contact intensity.…”
Section: Resultsmentioning
confidence: 99%
“…Electroluminescence is received by the photodetector for postsynaptic brightness (PSB) detection. Hybrid quantum dots (QDs) used in the light-emitting layer can emit light of specific color in response to electric field 7 , 50 53 , and the emission color can be changed by varying the magnitude of the electric field. Based on this, SMPS with synapse-like and multi-wavelength light output can be realized by tuning the electric field intensity generated by the contact intensity.…”
Section: Resultsmentioning
confidence: 99%
“…The increased hole mobility and decreased barrier energy will accelerate hole transfer from the HTL to the QDs, and promote hole transport in the QLEDs, thus matching the electron mobility of the QLEDs. [38][39][40] The trap density for devices based on TFB, P-TFB and PVK are calculated using eqn (3): 19…”
Section: Resultsmentioning
confidence: 99%
“…The increased hole mobility and decreased barrier energy will accelerate hole transfer from the HTL to the QDs, and promote hole transport in the QLEDs, thus matching the electron mobility of the QLEDs. 38–40 The trap density for devices based on TFB, P-TFB and PVK are calculated using eqn (3): 19 where ε 0 is the vacuum permittivity, ε r is the relative dielectric constant, V TFL is the trap-filled limit voltage, e is the electron charge, and d is the thickness of the film. The defect density of the TFB, P-TFB, and PVK films is 1.78 × 10 21 , 1.73 × 10 21 and 1.83 × 10 21 cm −3 , respectively (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Quantum dot light-emitting diodes (QLEDs) are considered to be one of the dominant display technologies of the future due to the tunable band gap, high efficiency, narrow bandwidth, and good stability of quantum dots (QDs). Because heavy metals are increasingly prohibited from being used in electronic devices, environmentally friendly indium phosphide (InP) QDs with a tunable emission spectrum over the entire visible region are ideal candidates. Currently, for InP QLEDs, the main problems to be tackled are the wide emission spectrum and relatively low efficiency.…”
Section: Introductionmentioning
confidence: 99%