Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Abstract

Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials.

Single GaAs nanowire-based high-performance photodetectors

“…Among these devices, GaAs NWs-based photodetectors have garnered significant attention due to their exceptional optical and electrical properties [1][2][3] . GaAs NWs exhibit unique characteristics, including high carrier mobility, excellent light absorption properties, and compatibility with existing semiconductor processing techniques, making them promising candidates for next-generation photodetection devices [4][5][6] .…”