Fast resistance switching of TiO<inf>2</inf> and MSQ thin films for non-volatile memory applications (RRAM)

Abstract

We present the fabrication method and the electrical performance of nanoscale crosspoint junctions for two different metal/ oxide/ metal configurations. 100 x 100 nm² small cells were fabricated by e-beam lithography and nanoimprint lithography (NIL), respectively. The electrical results show switching speeds of less than 10 ns for the SET and RESET operations, and resistance changes of several orders of magnitude. Additionally, the resistance state of TiO 2 thin films reveal a strong dependence on the switch signal and demonstrates a retention time of up to 10 5 s at room temperature and 85°C. The tested materials and fabrication steps are in good accordance with current and future CMOS technology and provide a way to achieve low cost, high density non-volatile memory.

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

“…Among different types of switching mechanisms the electrochemical metallization memories (ECM) demonstrate advantages of potential multi-bit storage4, nanosecond-ranged switching time5 and low power consumption6. The structure of the memory cell is simple to fabricate and consists of two electrodes with solid electrolyte in-between; the active (oxidizable) electrode is typically Ag or Cu and an inert (not dissolvable) material such as Pt, Ir, W or TiN are used as auxiliary electrode.…”

Memory Effects in Multi-terminal Solid State Devices and Their Applications

“…The well known TiO 2 -based ReRAM [21,22] seems to be based on a different mechanism, which is attributed to the vacancy/dopant diffusion in the oxide layer. The re-distribution of oxygen vacancies into the TiO 2 depends on the polarity of the applied voltage, and it causes the switching between a semiconductor state into a metallic one.…”

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

“…One example is the CuO-based ReRAM of Dong et al [12] that shows repeatable resistive switching at very low voltages. The well-known TiO 2 -based ReRAM [19], [20] seems to be based on a different mechanism, which is attributed to the vacancy/dopant diffusion in the oxide layer. The redistribution of oxygen vacancies into the TiO 2 depends on the polarity of the applied voltage, and it causes the switching between a semiconductor state into a metallic one.…”