Fast, precise, tomographic measurements of thin films

Ghim, Young-Sik; Kim, Seung-Woo

doi:10.1063/1.2776015

Cited by 42 publications

(34 citation statements)

References 7 publications

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“…We confirmed very good agreement between the thicknesses obtained from the interferometric phase and reflectance measurements. An estimated uncertainty in determining the thicknesses from the measured nonlinear-like phase is better than ± 1 nm and the minimum thickness that can be measured by combination of white-light spectral interferometry and reflectometry is below 50 nm [7]. The results obtained serve as an illustration of the feasibility of a simple technique in measuring precisely the nonlinear-like phase, which is related to the phase change on reflection from a thin film.…”

Section: Discussionmentioning

confidence: 77%

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Spectral interferometry and reflectometry used to measure thin films

et al. 2008

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A new method for a precise measurement of the oscillatory part of phase change on reflection (interferometric phase) from a thin-film structure is presented. The method, which is based on phase retrieval from the spectral interferograms recorded at the output of a slightly dispersive Michelson interferometer, is combined with reflectometry. The interferometric phase of the thin-film structure is measured precisely using a reference sample of known phase change on reflection. The spectral reflectance of the thin-film structure is also measured in the interferometer. The feasibility of the method is confirmed in processing the experimental data for SiO 2 thin film on a silicon wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. We confirm very good agreement between the thicknesses obtained from the interferometric phase and reflectance measurements.

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Section: Discussionmentioning

confidence: 77%

“…However, the results suffer from the systematic phase errors due to the optical components present in the interferometer. To minimize them, a procedure with the reference measurement needs to be applied [7].…”

Section: Introductionmentioning

confidence: 99%

Spectral interferometry and reflectometry used to measure thin films

et al. 2008

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“…However, the results suffered from the systematic phase errors due to the optical components present in the interferometer. To minimize them, a procedure with the reference measurement needs to be applied [7]. We applied a three-step procedure [12] that enabled us to determine both the effective thickness of a beam splitter cube and the phase contribution of the interferometer optical elements.…”

Section: Introductionmentioning

confidence: 99%

“…The latter technique is based on retrieving the relative phase change on reflection from a thin film. The use of white-light interferometry was extended into the spectral domain [6,7] where the phase of the reflected wave, which changes as a function of wavelength [8] and layer thickness, is inscribed in the recorded spectral interferogram (channelled spectrum). Moreover, a spectral-domain phase-shifting interferometric technique is of interest to researchers in retrieving the relative phase change on reflection from a thin film and in determining the film thickness [9].…”

Section: Introductionmentioning

confidence: 99%

Spectral interferometric technique to measure the relative phase change on reflection from a thin-film structure

2010

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A two-step white-light spectral interferometric technique to measure the relative phase change on reflection from a thin-film structure is presented. The technique is based on recording of the channelled spectra at the output of a Michelson interferometer and their processing by using a windowed Fourier transform to retrieve the phase functions. In the first step, the phase difference between the beams of the interferometer with a thin-film structure is retrieved. In the second step, the structure is replaced by a reference sample of known phase change on reflection and the corresponding phase difference is retrieved. From the two phase differences, the relative phase change on reflection from the thinfilm structure is obtained. The feasibility of the simple method is confirmed in processing the experimental data for a SiO 2 thin film on a Si wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. The thicknesses obtained are compared with those resulting from reflectometric measurements, and good agreement is confirmed.

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“…The use of white-light interferometry was extended into the spectral domain [6,7] where the phase of the reflected wave, which changes as a function of wavelength [8] and layer thickness, is inscribed in the recorded spectral interferogram.…”

Section: Introductionmentioning

confidence: 99%

The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

2009

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Techniques of spectral reflectometry and interferometry are used for measuring small changes in thickness of SiO 2 thin film grown by thermal oxidation on different silicon substrates. A slightly dispersive Michelson interferometer with one of its mirrors replaced by a thin-film structure is used to measure the reflectance and interferometric phase of the thin-film structure at the same time. The experimental data are used to determine precisely thickness of the SiO 2 thin film on silicon wafers of two crystallographic orientations and different dopant concentrations. We confirmed very good agreement between the experimental data and theory and revealed that the thin-film thickness, which varies with the type of silicon substrate, depends linearly on the wavelength at which minimum in the spectral reflectance occurs. Similar behaviour was revealed for the interferometric phase.

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Fast, precise, tomographic measurements of thin films

Cited by 42 publications

References 7 publications

Spectral interferometry and reflectometry used to measure thin films

Spectral interferometry and reflectometry used to measure thin films

Spectral interferometric technique to measure the relative phase change on reflection from a thin-film structure

The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

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