“…Recently, changes in the gate voltage and di/dt have been analyzed to identify a short-circuit fault in semiconductor devices [38]- [41]. These protection methods present fast fault detection speed and are preferable to be integrated within a gate driver chip.…”
Section: B Diagnosis Of Sc Switching Faultmentioning
“…Recently, changes in the gate voltage and di/dt have been analyzed to identify a short-circuit fault in semiconductor devices [38]- [41]. These protection methods present fast fault detection speed and are preferable to be integrated within a gate driver chip.…”
Section: B Diagnosis Of Sc Switching Faultmentioning
“…The collector-emitter voltage (V CE ) desaturation detection technique is the most commonly used short-circuit protection method [14], [22]- [24]. The desaturation detection technique detects the IGBT turn-on V CE , which is very low under normal conditions.…”
Intelligent power module (IPM) short-circuit protection is a key factor in improving the reliability of power electronics systems. The conventional short-circuit detection method based on monitoring the collector-emitter voltage (V CE) desaturation has a blanking time and is slow to respond to any type of shortcircuits. Furthermore, the di C /dt method cannot be used in the IPM due to the absence of Kelvin emitter. A slow short-circuit protection process can have an irrecoverable and destructive impact on the reliability of the IPM. In this paper, a new high-power IPM topology with an internally integrated shunt is designed to realize real-time current detection, which can achieve fast short-circuit detection without any blanking time. A prototype 1700 V/150 A IPM is manufactured, and a corresponding fast short-circuit protection circuit is designed. Experimental results show the effectiveness of the integrated shunt method as its performance is significantly better than that of the V CE desaturation method. The proposed IPM needs 380 ns and 1.4 µs to detect short-circuits of types I and II, respectively. The short-circuit withstand times for short-circuits of types I and II are 2.06 µs and 0.62 µs, respectively. In addition, the short-circuit energy losses for shortcircuits of types I and II are reduced by 66% and 64.3%, respectively, compared to the V CE desaturation method. The proposed method can also be used as a reference for other IPM designs.
“…In [21] and [22], printed circuit board Rogowski coil has been proposed to detect collector current. The last one is de-saturation detection [23][24][25][26][27], which has been used in many commercial products. It is regarded as a highly reliable method.…”
This paper proposed a self-adaptive blanking time (SABT) circuit for fast IGBT de-saturation short-circuit detection. When IGBT normally turns on or experiences fault under load (FUL), the blanking time is implemented by detecting the variation of IGBT collector-toemitter voltage VCE. While when IGBT is under hard switching failure (HSF), the blanking time is determined by detecting gate voltage VGE. The simulation with the UMC 0.6 μm 700 V technology indicates that the proposed SABT circuit can quickly detect FUL and HSF. Compared to the conventional blanking time circuit, the SABT circuit can shorten the fault detection time of FUL from 1.3 μs to 35.5 ns, while the fault detection time of HSF condition is reduced from 2.329 μs to 294 ns.
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