Fast novel thermal analysis simulation tool for integrated circuits (FANTASTIC)

Codecasa, Lorenzo; d’Alessandro, V.; Magnani, Alessandro; Rinaldi, N.; Zampardi, P.J.

doi:10.1109/therminic.2014.6972507

Cited by 78 publications

(38 citation statements)

References 23 publications

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“…The control algorithm is designed so as to provide a 50 Hz pure sine current computed by extracting a DCTM, which is then simulated [21], or with standard transient FEM simulations by activating one HS at a time, e.g., [32][33][34]. Figure 3 on a desktop PC equipped with an octa-core Intel i7-5960X and 64 GB RAM, leading to a total of 5 × 8 = 40 h for computing the whole ZTH(t) as required by fitting-based DCTMs, e.g., [18,20].…”

Section: Experimental Results: Power Model Equipped With a Poorly Permentioning

confidence: 99%

“…The thermal resistance R TH represents the steady state value of the thermal impedance. Z TH can be computed by extracting a DCTM, which is then simulated [21], or with standard transient FEM simulations by activating one HS at a time, e.g., [32][33][34]. In this work, two validations of the model and its IIR implementation have been proposed; (a) standard FEM simulations are compared to the ones performed with the IIR filter; and (b) an experimental setup was built to compare the baseplate temperature estimation with the measurement of a thermocouple (Fluke 179) mounted on its surface.…”

Section: Experimental Results: Power Model Equipped With a Poorly Permentioning

confidence: 99%

“…This work proposes a real-time on-line monitoring strategy based on a time-invariant DCTM of the whole power module, based on a Model Order Reduction (MOR) procedure [21,22], which describes the complete space-time evolution of the temperature field, unlike the adoption of standard Foster and Cauer representations, and is extremely fast and much less resource-intensive since it does not require computationally expensive transient FEM simulation. Starting from the measurement of the power dissipated by the active devices, the model provides an estimation of T j , the baseplate/heatsink temperature, and the temperature of the whole module, taking into account both self and mutual The paper is organized as follows.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, the DCTM is obtained with the following MOR procedure [21,22]. The material properties and the boundary conditions are to be provided as input data, while the mesh can be obtained from commercial (e.g., Comsol Multiphysics [40] ) or open-source tools.…”

mentioning

confidence: 99%

“…The adopted MOR procedure is fully automatic and relies on MPMM [35,36], which involves the solution of the thermal problem in a frequency domain, i.e., of linear algebraic systems instead of ordinary differential equations. In particular, the problem is evaluated by fixing the frequency at specific values automatically evaluated according to a single user-defined error parameter [21]. The frequency-domain heat conduction problem solutions at the aforementioned frequencies, each involving a simple system of linear equation, are denoted as moments.…”

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confidence: 99%

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On-Line Junction Temperature Monitoring of Switching Devices with Dynamic Compact Thermal Models Extracted with Model Order Reduction

et al. 2017

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Abstract:Residual lifetime estimation has gained a key point among the techniques that improve the reliability and the efficiency of power converters. The main cause of failures are the junction temperature cycles exhibited by switching devices during their normal operation; therefore, reliable power converter lifetime estimation requires the knowledge of the junction temperature time profile. Since on-line dynamic temperature measurements are extremely difficult, in this work an innovative real-time monitoring strategy is proposed, which is capable of estimating the junction temperature profile from the measurement of the dissipated powers through an accurate and compact thermal model of the whole power module. The equations of this model can be easily implemented inside a FPGA, exploiting the control architecture already present in modern power converters. Experimental results on an IGBT power module demonstrate the reliability of the proposed method.

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Section: Experimental Results: Power Model Equipped With a Poorly Permentioning

confidence: 99%

Section: Experimental Results: Power Model Equipped With a Poorly Permentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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On-Line Junction Temperature Monitoring of Switching Devices with Dynamic Compact Thermal Models Extracted with Model Order Reduction

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Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments

d’Alessandro

Catalano

Codecasa

et al. 2018

Int J Numerical Modelling

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This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state-of-the-art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes. Extremely accurate thermal simulations are conducted in a relatively short time with a tool relying on a commercial 3-D finite-element method (FEM) solver and an in-house routine for automated geometry construction, optimized mesh generation, sequential solution, and data storing/processing. Design of Experiments is used to define a thermal resistance model as a function of the aforementioned parameters on the basis of a few FEM data. also studied the beneficial effect of a thermally-conductive and/or shorter path from the heat dissipation region to the sink, which can be obtained with flip-chip packaging 13,14,19,20,22,30 or alternative strategies based on thermal vias. 17,32 Unfortunately, almost all the thermal analyses presented in the above papers are (sometimes unacceptably) inaccurate: the real-and complex-device structures are always represented with simplified (or even oversimplified) domains to allow (1) the development of analytical models for the temperature distribution or (2) an easy construction/meshing of the 3-D geometry for numerical simulations; still now, in spite of the continuous improvement in PC performances, task (2) is not trivial if performed manually, especially when all technological details must be taken into account.Recently, the upward heat flow has been given attention in some works from the authors. [37][38][39][40] In particular, besides the metallization, the often overlooked role played by the emitter stack (previously investigated only in a study by Anholt 22 ) has been analyzed in a state-of-the-art InGaP/GaAs HBTs in previous papers [38][39][40] ; the relevance of these studies is driven by the low thermal conductivities of the ternary InGaAs and InGaP emitter layers (even lower than GaAs), which make thermal shunt solutions less effective. For this purpose, the authors have used a simulation/modeling strategy based on combining (1) a tool that relies on a 3-D finite-element method (FEM) software package aided by an in-house routine, and (2) Design of Experiments (DOE) to analytically derive a predictive thermal resistance model starting from a minimized number of FEM results. Contrary to prior work, the proposed tool ensures very high simulation accuracy: starting from the actual masks used for device fabrication, it allows an automated and extremely detailed construction/meshing of the 3-D transistor structure in the environment of the FEM solver. Thanks to this feature, it can be easily integrated into a standard design process, and can in principle be used for any device technology.This work aims at extending the analysis presented in Catalano et al 38 where the impact of emitter stack and metallization layers on the thermal behavior was evaluated for various emitter areas and shapes in single-finger InGaP/GaAs HBTs. Compared wi...

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