On-Line Junction Temperature Monitoring of Switching Devices with Dynamic Compact Thermal Models Extracted with Model Order Reduction

Napoli, Fabio Di; Magnani, Alessandro; Coppola, M.; Guerriero, Pierluigi; d’Alessandro, V.; Codecasa, Lorenzo; Tricoli, Pietro; Daliento, S.

doi:10.3390/en10020189

Cited by 34 publications

(17 citation statements)

References 48 publications

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“…The same research gives information, according to which the maximum overloading, therefore the probable failure, occurs mostly when high current and high voltage are simultaneously applied across the device during the switch-on or switch-off periods. Additionally, the dependency of IGBTs dynamic characteristic on the temperature can be verified with modeling and simulations [12][13][14]. The proposed models have applications in converter design, mode-of-operation analysis, lifespan estimation, analysis and design of the necessary cooling system, etc.…”

Section: Introductionmentioning

confidence: 80%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

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Section: Introductionmentioning

confidence: 80%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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Section: Algorithm Validation and Reference Case Studiesmentioning

confidence: 99%

“…The first 2 data sets consist of the thermal impedance matrix derived from FEM simulations of an insulated gate bipolar transistor (IGBT) power module comprising 2 IGBTs and 2 diodes, rated at 114 A, 600 V. Parameters used for the FEM simulations are fully described in Di Napoli et al 44 In the first case, the heatsink coefficient is set to 0.2 K/W, which can be obtained with a forced convection cooling system. This scenario has been considered to observe a wide temperature excursion.…”

Section: Algorithm Validation and Reference Case Studiesmentioning

confidence: 99%

Advancements in the identification of passive RC networks for compact modeling of thermal effects in electronic devices and systems

Tommasi

Magnani

Magistris

2017

Int J Numerical Modelling

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We deal with the problem of identifying the parameters of an equivalent lumped RC multiport network from time domain tabulated data of a corresponding distributed real eigenvalues problem, as obtained from either measurements or accurate simulation tools. A novel step response matrix identification procedure is proposed, based on the combination of an outer nonlinear least squares iteration for the relocation of time constants, and an inner convex programming cycle for the identification of the corresponding residue matrix terms, able to guarantee a priori the passivity property of the equivalent RC network. The structure of the algorithm and its principal functions connections are shown, and the mathematical features of the proposed formulation of the identification problem are accurately described and commented. Moreover, the possibility of getting direct synthesis of a Foster generalized concretely passive multiport, as a consequence of the optimal identification of a passive real eigenvalues model from data, is discussed. Since the technique is well suited (although not limited) to the reduced analysis of typical electro‐thermal problems, a set of significant case studies in this area is considered. In this way the algorithm present implementation is validated, also comparing it to previous well assessed methods, evidencing its large potential and value.

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“…Switching devices usually fail due to the junction temperature being overcome during the normal operation, as a precise estimation of the junction temperature variation is necessary. In [2], a real-time monitoring strategy to estimate the junction temperature profile considering the dissipated powers is proposed. In [3], it is shown that the Lorentz temperature distribution allows for the estimation of the temperature within a substrate using some parameters of a power electronic device and a 3D temperature distribution of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Pleşca

2019

Energies

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Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results.

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On-Line Junction Temperature Monitoring of Switching Devices with Dynamic Compact Thermal Models Extracted with Model Order Reduction

Cited by 34 publications

References 48 publications

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

Advancements in the identification of passive RC networks for compact modeling of thermal effects in electronic devices and systems

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

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