Fast measurement of the peak junction temperature of power transistors using electrical method

Lu, C.Z.; Wang, M.Z.; Gui, Xiang; Gao, Guangjun; Yi, Boram

doi:10.1109/stherm.1991.152909

Cited by 14 publications

(3 citation statements)

References 2 publications

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“…Ti(n,m, z) = Asinh( 7 (L 3 + L 2 + L\ + z)), Now, it is shown that the above are the solutions of the z-dependent part of the steady-state heat flow equation (see eq (16)…”

Section: -Kokkas Three-layer Modelmentioning

confidence: 98%

“…Another example is found in an electrical technique for the measurement of the peak junction temperature of power transistors [15]. This has recently been applied to the use of the gate voltage in the measurement of the average channel temperature of a power GaAs MESFET (MEtal-Semiconductor Field Effect Transistor) [16,17]. The work in reference…”

Section: -Introductionmentioning

confidence: 99%

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Hotpac

Albers¹

1995

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This report presents and discusses a number of recent developments in the steady-state thermal analysis of multiple-layer structures. These include: 1) analytical evaluation of line and area average temperatures and 2) a recursion relation technique for calculating the steady-state surface temperature of a multilayer structure with an arbitrary number of layers. The application of the analytic averaging to the TXYZ code is incorporated in the updated code, TXYZ30, while the multilayer recursion relation solution along with analytic averaging are included in the Thermal MultiLayer code, TML. Both of these are contained in the HOTPAC software package. The first part of this report contains a discussion of the general elements of the multiplelayer thermal model. This is presented in some detail for the case of the Kokkas three-layer problem and the associated TXYZ code. The previous update of the code, TXYZ20, is also discussed. This incorporates more flexible handling of input data, assignment of positive or negative noninteger weights to the various heat sources or heat sinks, and improved evaluation of limiting forms in the code. The second part of the report presents the analytical evaluation of line and area averages which can be calculated directly. The analytical calculation of the area average temperature should provide for a more direct and convenient connection to the experimentally measured temperature which tends to average over the measurement area. The line and area averaging are incorporated into the TXYZ code to produce the TXYZ30 update. The third portion contains a detailed discussion of the calculation of the surface temperature of a multilayer structure with an arbitrary number of layers. This is based on a recursion relation technique previously employed in electrical spreading resistance analysis to determine the surface potential from the multilayer electrical Laplace equation. The line and area averaging techniques can be applied directly to the recursion relation solution and are included in the Thermal MultiLayer, TML, code. The appendices contain the listing of the annotated, internally documented FORTRAN source codes for TXYZ30 and TML. These codes as well as several sample input and output data files are available in ASCII format on DOS-formatted floppy disks. The sample input and output data files are included so that the user can check the programs for proper operation as well as become familiar with the setup and use of the codes. Users of the 1 previous versions of the TXYZ code should find the TXYZ30 and TML codes easy to use and should benefit from the wider range of problems which they can be used to address.

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“…Ti(n,m, z) = Asinh( 7 (L 3 + L 2 + L\ + z)), Now, it is shown that the above are the solutions of the z-dependent part of the steady-state heat flow equation (see eq (16)…”

Section: -Kokkas Three-layer Modelmentioning

confidence: 98%

Section: -Introductionmentioning

confidence: 99%

Hotpac

Albers¹

1995

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“…El método de la corriente por puerta en directa [137,142,143], más conocido como el método PEM [pulse electrical method), ha sido el tradicionalmente empleado para la determinación de la temperatura interna en transistores FET. Sin embargo, su empleo queda restringido a aquellos dispositivos de baja potencia que manifiestan un valor bajo de IDSS, pues requiere la conducción en directa de la puerta del transistor a caracterizar térmicamente.…”

Section: Método De La Corriente Por Puerta En Directaunclassified

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

Penalva¹

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El trabajo de tesis doctoral que se presenta aborda diferentes aspectos relativos a la caracterización eléctrica y térmica de amplificadores MMIC de potencia. Los resultados obtenidos a partir del estudio teórico y experimental llevado a cabo han contribuido a un mejor III entendimiento del comportamiento de los amplificadores MMIC de potencia empleados, así como a un mejor diseño de los prototipos de transmisor desarrollados.

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