Fast high voltage pulse generator with nonlinear transmission line for high repetitive operation

Ibuka, Shinji; Miyazawa, Tomotaka; Ishii, Akira; Ishii, Shozo

doi:10.1109/ppc.1995.599807

Cited by 11 publications

(1 citation statement)

References 11 publications

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“…8) Due to the voltage-dependent capacitance of Schottky-barrier diodes (SBDs), a transmission line periodically loaded with reversely biased SBDs forms an NLTL. 9) In microwave bands, such NLTLs are widely used in phase shifters, 10,11) pulse sharpeners, [12][13][14] and frequency multipliers. [15][16][17] At an input frequency of f 0 the NLTL comb generator can produce a frequency comb of m f 0 (m = 1, 2, 3......).…”

mentioning

confidence: 99%

A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line

Xiang,

Zhu,

Ding

et al. 2023

Appl. Phys. Express

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In this paper, a microwave nonlinear transmission line (NLTL) based on AlGaN/GaN Schottky-barrier diodes (SBDs) is demonstrated. As a comb generator, the NLTL produces a frequency comb from 5 GHz to 40 GHz at the input frequency of 5 GHz. The output power at 35 GHz and 40 GHz are -14 dBm and -20 dBm at the input power of 22.5 dBm, respectively, which is superior to commercial GaAs NLTL. The NLTL is confirmed to have a higher saturation input power than commercial GaAs NLTL, indicating that the AlGaN/GaN NLTL is more advantageous at high power input.

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mentioning

confidence: 99%

A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line

Xiang,

Zhu,

Ding

et al. 2023

Appl. Phys. Express

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Fast high-voltage pulse generation using nonlinear capacitors

Rim

Lee

Pavlov

et al. 2000

IEEE Trans. Plasma Sci.

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SI-thyristor as a high power switching device for fast high voltage pulse generators

Ibuka

Sakamoto²,

Yamamoto³

et al.

Digest of Technical Papers. 11th IEEE International Pulsed Power Conference (Cat. No.97CH36127)

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C -. 'on of SI-thyrisos as a f b t closing switch for puked power application was examined Since the SI-thyrkh~ employd in ths study are normally on+&&, a negative bias voltage, is necessary at the gate electrode to establish hold-offstate. As a mmquene, list aurentrise rate can be stmngly expected A low nmpedance gate driving Circuit built with MOSFETs improved turn-on characteristics remark&@. By adjusting anode voltage distriion and gate timing mefidly, sfxked SI-thymto~ were SllcceSSfully operated to make tum on. The highest Ndt obtained in this study is 55kA/ps. A M highvoltage pulse genemior with mqp%c pulse compression scheme was built by using stacked SI-thyristors. To obtain faster high voltage p u l s e , a x " t " s s . 'on line as an additional d t for pulse dmpemg was employed. in c;lructure of n-regm have a lower onvoltage and a shorter tum-on time.954 0-78034214-3/97/$10.00 0 1997 IEEE

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Fast high voltage pulse generator with nonlinear transmission line for high repetitive operation

Cited by 11 publications

References 11 publications

A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line

A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line

Fast high-voltage pulse generation using nonlinear capacitors

SI-thyristor as a high power switching device for fast high voltage pulse generators

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