Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Qi, Yue; Wang, Yunyu; Pang, Zhenqian; Dou, Zhipeng; Wei, Tongbo; Gao, Peng; Zhang, Shishu; Xu, Xiaozhi; Chang, Zhenghua; Deng, Bing; Chen, Shulin; Chen, Zhaolong; Ci, Haina; Wang, Ruoyu; Zhao, Fulin; Yan, Jianchang; Yi, Xiaoyan; Liu, Kaihui; Peng, Hailin; Liu, Zhiqiang; Tong, Lianming; Zhang, Jin; Wei, Yujie; Li, Jinmin; Liu, Zhongfan

doi:10.1021/jacs.8b03871

Cited by 74 publications

(53 citation statements)

References 42 publications

(59 reference statements)

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“…It is assumed that direct seed epitaxial growth can release the strains and further inhibit common crystal defects. [ 28 ] To validate this, we investigated this vapor‐phase growth system. Compared with blank silicon, we discovered that the introduced seeds can achieve an accurate control of CsPbBr 3 perovskite epitaxial growth ( Figure a,b).…”

Section: Figurementioning

confidence: 99%

Controllable Growth of High‐Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Zhou

Huang

et al. 2020

Advanced Materials

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CsPbX 3 single crystals for constructing high-performance integrated electronic and optoelectronic systems. [15][16][17] However, because of lattice mismatch and random nucleation, [18,19] it is difficult to grow arrays of CsPbX 3 microcrystals in the vapor phase with uniform morphology as well as controlled location and size. For example, lattice mismatch results in diverse crystal morphologies and large densities of crystalline defects, including stacking faults, screw dislocations, and crystal boundaries. [20,21] Random nucleation is a disadvantage in the precise control of crystal locations for device integration. [22,23] Hence, the controllable growth of highquality perovskite single crystals for a device is highly challenging. This significantly hinders the controllable production of high-performance perovskite singlecrystal devices in arrays for integrated electronic and optoelectronic systems. Herein, we report an effective strategy to control the vaporphase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controllable location and size. By introducing CsPbBr 3 seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of CsPbBr 3 crystals is accurately controlled. In contrast to conventional vapor-phase growth methods, the as-prepared CsPbBr 3 single crystals can be selectively grown with uniform morphology as well as controlled location and size. Optical and electronic characterizations demonstrate that the CsPbBr 3 microplates exhibit a lower trap density and an enhancement in carrier lifetime exceeding 300% compared with those of conventional methods. The CsPbBr 3 microplate arrays were monolithically grown on silicon, demonstrating excellent lasing performance with the highest quality factor (Q factor) of ≈6806 and the narrowest full-width at half-maximum (FWHM) of ≈0.08 nm, which is the best laser performance among the reported perovskite singlecrystal arrays. Furthermore, the CsPbBr 3 microplate array was directly grown on a quartz glass for the scalable fabrication of high-performance photodetectors. This strategy allows the growth of high-quality CsPbBr 3 microplates with controllable size and location, thereby providing new opportunities for the construction of high-performance optoelectronic devices.To selectively grow CsPbBr 3 microplate arrays in the vapor phase, we first fabricated CsPbBr 3 seeds on silicon using our Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controlled location and size is r...

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Section: Figurementioning

confidence: 99%

Controllable Growth of High‐Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Zhou

Huang

et al. 2020

Advanced Materials

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“…It is shown that strainsensitive E 2 (high) and A 1 (LO) peaks shift from 570.5 to 569.1 cm −1 and from 737.5 to 735.8 cm −1 , respectively, indicating the relaxation of residual compressive strain in the GaN epilayer. [8,47] In fact, the residual compressive strain in the GaN layer can be further relaxed by increasing the thickness of h-BN interlayer (see Figure S5b, Supporting Information). However, the crystalline quality is also degraded with increasing the h-BN thickness unfortunately.…”

Section: Doi: 101002/advs202000917mentioning

confidence: 99%

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Liu

Zhang

et al. 2020

Advanced Science

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Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al 2 O 3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices.

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“…Graphene prepared through the CVD method also performs well in the van der Waals epitaxy process on both amorphous and crystalline substrates. Hong et al and Qi et al transferred CVD prepared graphene onto amorphous substrate and sapphire substrate as the buffer layer before GaN epitaxy, respectively [26,27]. Except for transferring the CVD graphene grown on Cu or Ni foil to the target substrate, graphene can be directly grown on the target substrate.…”

Section: D Materials and Van Der Waals Epitaxymentioning

confidence: 99%

Van der Waals Epitaxy of III-Nitrides and Its Applications

et al. 2020

Self Cite

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III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.

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Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Cited by 74 publications

References 42 publications

Controllable Growth of High‐Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Controllable Growth of High‐Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Van der Waals Epitaxy of III-Nitrides and Its Applications

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