2004
DOI: 10.1109/lpt.2004.826135
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Fast and Widely Tunable Optical Packet Switching Scheme Based on Tunable Laser and Dual-Pump Four-Wave Mixing

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Cited by 15 publications
(4 citation statements)
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“…Four-wave mixing (FWM) is a parametric nonlinear process with widespread applications in wavelength conversion, signal regeneration, switching, phase-sensitive amplification, nonlinear imaging, and entangled photon pair generation 1 2 3 4 5 6 . It is a byproduct of the Kerr nonlinear optical effect and has an almost instantaneous response on the order of femtoseconds 7 .…”
mentioning
confidence: 99%
“…Four-wave mixing (FWM) is a parametric nonlinear process with widespread applications in wavelength conversion, signal regeneration, switching, phase-sensitive amplification, nonlinear imaging, and entangled photon pair generation 1 2 3 4 5 6 . It is a byproduct of the Kerr nonlinear optical effect and has an almost instantaneous response on the order of femtoseconds 7 .…”
mentioning
confidence: 99%
“…FWM is of significant interest, as it allows for all-optical carrier signals wavelength change without the need for efficiency overhead-heavy optical-electrical-optical conversion. FWM generation has been explored for a multitude of applications, including wavelength conversion [13], optical switching [14], high-speed signal demultiplexing [15], and the generation of phase-conjugated signals [16], as well as providing the basis on which the nonlinearity and chromatic dispersion of optical fibers can be measured [17].…”
Section: Introductionmentioning
confidence: 99%
“…Among these router devices, a tunable laser, as a part of a wavelength conversion system, is a key element in forming a wavelength-convertible network. 18,19) Recently, by using low-loss Si waveguides and ring resonators as an external cavity, tunable lasers that exhibit a sub mode suppression ratio (SMSR) of more than 45 dB across a tunable wavelength range of 54 nm, an SMSR of more than 29 dB across a tunable range of 99 nm, and a linewidth of less than 15 kHz across the C-band have been realized. [20][21][22] Various III-V=Si hybrid devices fabricated by heterogeneous integration, such as hydrophilic bonding, [23][24][25] hydrophobic bonding, 26,27) metal bonding, 28,29) oxygen-plasmaassisted bonding, [30][31][32][33][34] adhesive bonding, [35][36][37][38] and flip-chip assembly, 22,39) have been reported.…”
Section: Introductionmentioning
confidence: 99%