A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6 dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique. © 2012 Optical Society of America OCIS codes: 130.0250, 060.5060.Phase modulation represents a key functionality in nextgeneration optical networks. To date, several approaches integrated on different technology platforms have been reported [1][2][3][4][5][6]. Among them, those based on silicon-oninsulator (SOI) are preferred due to the possibility of high-density integration, as well as complementary metal oxide semiconductor compatibility [7]. In silicon, phase modulation relies on controllable refractive index modification. The thermo-optic effect and the free-carrier dispersion (FCD) are the most commonly used mechanisms to implement tunable refractive index. Thermo-optics is the simplest way. However, drawbacks-such as the response times in the μs range [8], the thermal cross talk, and the large power consumption due to the continuous current flow-hamper its assembly in high-speed optical data links. On the other hand, the response time can be greatly enhanced by exploiting the FCD effect through carrier injection or depletion [7]. Carrier-depletion-based approaches can reach operation speeds of several hundreds of megabits per second. Yet large interaction lengths owing to the small light confinement in the depletion region are required. This fact in combination with an optical absorption increase provided by the carrier extraction, result in a modest power handling [9]. Regarding carrier injection, the response time is limited by the carrier recombination process in silicon, i.e., a few nanoseconds [10]. Nevertheless, the modulation efficiency is improved compared to that obtained by carrier depletion, since extra loss derived from light absorption is avoided. In order to enhance the modulation speed in FCD-based schemes, a special driving technique known as preemphasis can be used [11]. As a consequence, the speed of on-off-keyed modulated signals has been pushed up to 18 Gbps when using carrier depletion in microrings [12]. Aiming at improving the sensitivity and robustness against nonlinear effects, advanced modulation formats can be implemented. Recently, error-free transmission of differential-phase-shift-keyed modulated signals at 5 Gbps exploiting carrier depletion with preemphasis in silicon microrings has been demonstrated [13]. Hybrid approaches consisting of bonding active III-V materials on top of SOI circuits represent a feasible solution in order to enhance the modulating performance [14,15]. Inherent dynamics in semiconductor materials is faster than in silicon. In particular, ...