We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.
We demonstrate C-band wavelength conversion in Si photonic-wire waveguides with submicron cross-section by means of nonresonant, nondegenerate four-wave mixing (FWM) using low-power, cw-laser sources. Our analysis shows that for these deeply scaled Si waveguides, FWM can be observed despite the large phase mismatch imposed by strong waveguide dispersion. The theoretical calculations agree well with proof-of-concept experiments. The nonresonant character of the FWM scheme employed allows to demonstrate frequency tuning of the idler from ~ 20 GHz to > 100 GHz thus covering several C-band DWDM channels.
We demonstrate the integration of a single-crystal magneto-optical film onto thin silicon-on-insulator (SOI) waveguides by use of direct wafer bonding. Simulations show that the high confinement and asymmetric structure of SOI allows an enhancement of approximately 3x over the nonreciprocal phase shift achieved in previous designs; this value is confirmed by our measurements. Our structure will allow compact magneto-optical nonreciprocal devices, such as isolators, integrated on a silicon waveguiding platform.
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