“…In the past decades, visible-light photodetectors (PDs), including photoconductors, photodiodes, phototransistors, avalanche photodetectors, and quantum well detectors, have been demonstrated. [1,2] Narrow-to-medium bandgap (≈1-3.5 eV) DOI: 10.1002/adom.202203006 semiconductors, for example, Si, SiC, CdS, GaAs, ZnO, ZnSe, etc., were employed as an active layer in such visible-light PDs, showing satisfying performance under normal conditions of operation. [3][4][5][6][7] However, these visible-light PDs are low tolerance against high temperature, gamma-ray, and neutrons, and their solid-state imaging systems will deteriorate upon a total dose of 200 to 1000 Gy irradiations.…”