Fast and Efficient Photodetection in Nanoscale Quantum-Dot Junctions

Prins, Ferry; Buscema, Michele; Seldenthuis, Johannes S.; Etaki, S.; Buchs, Gilles; Barkelid, Maria; Zwiller, Val; Gao, Yunan; Houtepen, Arjan J.; Siebbeles, Laurens D. A.; Zant, Herre S. J. van der

doi:10.1021/nl303008y

Cited by 56 publications

(64 citation statements)

References 29 publications

(67 reference statements)

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“…30,36 Because of the n-type nature of these PNCs, the electron will recirculate several times during the hole carrier lifetime, leading to photogating 37 and to the observed enhanced photocurrent. 38 In conclusion, using a combination of DC and time resolved transport measurements, we provide evidence that the photocurrent of PNC arrays is limited by the fast bimolecular recombination of the material. This leads to fast recombination of the photogenerated electron-hole pair which allows for high bandwidth photodetection with time response as short as 1.2 ns but limits the absolute photoresponse of the film.…”

Section: Figure 2 (A) IV Curves Of a Film Of Cspb(br065i035)3 Pncmentioning

confidence: 72%

Strategy to overcome recombination limited photocurrent generation in CsPbX3 nanocrystal arrays

Mir

Livache

Goubet

et al. 2018

Applied Physics Letters

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We discuss the transport properties of CsPbBrxI3−x perovskite nanocrystal arrays as a model ensemble system of caesium lead halide-based perovskite nanocrystal arrays. While this material is very promising for the design of light emitting diodes, laser, and solar cells, very little work has been devoted to the basic understanding of their (photo)conductive properties in an ensemble system. By combining DC and time-resolved photocurrent measurements, we demonstrate fast photodetection with time response below 2 ns. The photocurrent generation in perovskite nanocrystal-based arrays is limited by fast bimolecular recombination of the material, which limits the lifetime of the photogenerated electron-hole pairs. We propose to use nanotrench electrodes as a strategy to ensure that the device size fits within the obtained diffusion length of the material in order to boost the transport efficiency and thus observe an enhancement of the photoresponse by a factor of 1000.

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Section: Figure 2 (A) IV Curves Of a Film Of Cspb(br065i035)3 Pncmentioning

confidence: 72%

Strategy to overcome recombination limited photocurrent generation in CsPbX3 nanocrystal arrays

Mir

Livache

Goubet

et al. 2018

Applied Physics Letters

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“…37,38 The decrease in responsivity with incident optical power is commonly observed in photodetectors based on other nanostructured materials, such as MoS 2 , 10, 29 and colloidal quantum dots. 39,40 This effect can be (Figure 4a), we measure the 10-90% rise and fall time to be 1 ms and 4 ms, respectively. From the rise time we can estimate an f 3dB of 6.2 kHz.…”

Section: Main Textmentioning

confidence: 95%

Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

et al. 2014

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Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm 2 /V s and current ON/OFF ratio larger than 10 3 . Upon illumination, the black phosphorus transistors show response to excitation wavelengths from the visible up to 940 nm and rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W and it could be drastically enhanced by engineering a detector based on a PN junction. The

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“…Over the past several years, various chalcogenide or metal oxide colloidal quantum dots (QDs) have been synthesized and developed for optoelectronic device applications such as light emitting diodes, 1-4 photodetectors [5][6][7][8][9][10][11][12] and photovoltaic cells. [13][14][15][16][17][18] Among the various types of QDs, lead sulfide (PbS) QD has been extensively studied because it is a promising material for collecting sunlight energy 14,15 or for near-infrared (NIR) photodetection.…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

et al. 2016

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Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 10 6 A W − 1 and a specific detectivity in the order of 10 13 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of~4.9 V (~99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/ imagers that can be easily integrated.

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Fast and Efficient Photodetection in Nanoscale Quantum-Dot Junctions

Cited by 56 publications

References 29 publications

Strategy to overcome recombination limited photocurrent generation in CsPbX3 nanocrystal arrays

Strategy to overcome recombination limited photocurrent generation in CsPbX3 nanocrystal arrays

Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

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