Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole     Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs

Fukasawa, Ryoichi; Sakai, Kiyomi; Perkowitz, Sidney

doi:10.1143/jjap.36.5543

Cited by 13 publications

(17 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…͑ii͒ The reflectivity minimum becomes more pronounced and moves up to higher frequency. The overall spectral shapes in the one-phononband region for our GaAs:C films are similar to those for GaAs:Be films reported in earlier papers, 27,28 and the broad shapes in the reflectivity-minimum region also resemble those for GaAs:C films studied by Wang and Haegel. 15 In addition to the doping effects, the thickness of the GaAs:C film has an influence on the reflectivity.…”

supporting

confidence: 86%

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

View full text Add to dashboard Cite

Infrared reflectivity measurements ͑200-5000 cm Ϫ1 ) and transmittance measurements ͑500-5000 cm Ϫ1 )have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm Ϫ1 region and the onephonon band near 270 cm Ϫ1 rides on a progressively increasing high-reflectivity background. An effectiveplasmon/one-phonon dielectric function with only two free parameters ͑plasma frequency p and damping constant ␥) gives a good description of the main features of both the reflectivity and transmittance spectra. The dependence of p 2 on hole concentration p is linear; at pϭ1.4ϫ10 20 cm Ϫ3 , p is 2150 cm Ϫ1 . At each doping, the damping constant ␥ is large and corresponds to an infrared hole mobility that is about half the Hall mobility. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-derived p is close to the carbon concentration and that the Hall factor is close to unity, so that the Hall mobility provides a good estimate of actual dc mobility. The observed dichotomy between the dc and infrared mobilities is real, not a statistical-averaging artifact. The explanation of the small infrared mobility resides in the influence of intervalence-band absorption on the effective-plasmon damping, which operationally determines that mobility. This is revealed by a comparison of the infrared absorption results to Braunstein's low-p p-GaAs spectra and to a k"p calculation extending Kane's theory to our high dopings. For n-GaAs, which lacks infrared interband absorption, the dc and infrared mobilities do not differ.

show abstract

supporting

confidence: 86%

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…͑Note that the infrared mobility is operationally obtained within the context of the effectiveplasmon model.͒ This is the reason for the discrepancy between the infrared and Hall mobilities in p-GaAs; IR obtained in this way is about half as large as Hall . 2,3 In n-GaAs, in which interband absorption is absent in the infrared region of the plasmon reflectivity feature, the standard IR-reflectivity effective-plasmon analysis yields a IR which does not disagree with Hall .…”

Section: Limitations Of the Effective-plasmon Model For P-gaasmentioning

confidence: 99%

“…͑4͒, p is the actual hole concentration, which is given by r Hall p Hall where r Hall is the Hall factor. 2,3,20,21 The Hall factor also intervenes in the connection between the actual drift mobility and the measured Hall mobility Hall , ϭ(1/r Hall ) Hall .…”

Section: ͑4͒mentioning

confidence: 99%

“…For heavily doped p-GaAs, infrared studies have focused on hole-plasmon processes ͑free-carrier intraband transitions͒ as manifested in the doping dependence of a highly damped reflectivity plasma edge. 2,3 ͑The plasmonlike L ϩ mode is, in p-GaAs, inaccessible to Raman experiments. 3 ͒ Absorptance measurements on heavily doped p-GaAs films grown by molecular beam epitaxy ͑MBE͒ were reported recently by Songprakob et al 3 and by Huberman et al 4 Both groups recognized that intervalenceband transitions contribute significantly to infrared absorption, but their results suggest only one very broad absorption feature which is a combination of hole-plasmon and IVB contributions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Intervalenceband and plasmon optical absorption in heavily doped GaAs:C

Songprakob

Zallen

Tsu³

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

By using direct numerical-solution techniques for the reflectance (R) and transmittance (T) equations of a multilayer structure, we have analyzed infrared R and T measurements on heavily doped p-type GaAs:C films grown by molecular beam epitaxy. The optical properties, for films with hole concentrations up to 1.4ϫ10 20 cm Ϫ3 , were determined for photon energies from 0.07 to 0.6 eV, in which region plasmon ͑intraband͒ and intervalenceband contributions are in competition. Our results for the optical absorption coefficient resolve two separate peaks located ͑at high doping͒ at about 0.1 and 0.2 eV. By carrying out calculations of the intervalenceband ͑IVB͒ absorption processes for our dopings, we identify the peak near 0.2 eV with light-hole to heavy-hole IVB transitions, and we attribute the lower-energy peak to hole-plasmon excitations. Our experimental absorption spectra are very well described by a model combining the IVB contribution to the dielectric function with a plasmon contribution. The hole-plasmon parameters we obtain for highly doped p-GaAs yield an infrared mobility which ͑unlike the too-small IVB-entangled infrared mobility implied by the use of the usual effective-plasmon model͒ is in substantial agreement with the dc mobility.

show abstract

“…Measurements of plasma frequency properties in a transmission configuration at terahertz frequencies have been used for the determination of free-charge-carrier properties in single crystals. [1][2][3][4][5][6][7] Characterization of free-charge-carrier properties in low-doped homo-and heterostructures remains a challenge. Specifically, the transmission configuration is inapplicable for overlayers with low charge densities deposited on highly doped substrates, since strong plasma absorption occurs for terahertz wavelengths within the substrate.…”

Section: Hole Diffusion Profile In a P-p + Silicon Homojunction Determentioning

confidence: 99%

Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Hofmann

Herzinger

Tiwald

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

Noninvasive optical measurement of hole diffusion profiles in p-p+ silicon homojunction is reported by ellipsometry in the terahertz (0.2–1.5 THz) and midinfrared (9–50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p-p+ homojunction, and which is found to be extremely sensitive to the low-doped p-type carrier concentration as well as to the hole diffusion profile within the p-p+ homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9×1015 cm−3, p+=5.6×1018 cm−3, and diffusion time constant Dt=7.7×10−3 μm2, in agreement with previous electrical investigations.

show abstract

Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs

Cited by 13 publications

References 16 publications

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Intervalenceband and plasmon optical absorption in heavily doped GaAs:C

Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Contact Info

Product

Resources

About