Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon

Orlova, E. E.; Жукавин, Р.Х.; Pavlov, S.G.; Shastin, V. N.

doi:10.1002/(sici)1521-3951(199812)210:2<859::aid-pssb859>3.0.co;2-q

Cited by 29 publications

(23 citation statements)

References 7 publications

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“…It was proposed to obtain population inversion between particular excited states, the relatively long-living 2p 0 state and the lower 1s(E) state of the phosphorus donor embedded in a silicon crystal (Si:P), for instance, by photoionization of the donor atoms with radiation from a midinfrared CO 2 laser [30]. A similar four-level laser scheme was expected for silicon doped by bismuth, where the laser levels should be determined by resonant interaction with an optical phonon [31,32]. Spontaneous [32,33] and stimulated emission from Si:P crystals were obtained in 1999 [15].…”

mentioning

confidence: 88%

“…This results in an almost one order of magnitude smaller gain for silicon lasers under photoionization pumping in comparison with the resonantly pumped lasers. Initial calculations assuming a lifetime t 2p 0 ¼ 3 Â 10 À7 s ) t 1sðE;T 2 Þ and a doping concentration N D ¼ 10 15 cm À3 yielded a small signal gain a $ 0.3 cm À1 for Si:P at T < 10 K pumped by 10 W cm À2 intensity of a CO 2 laser operating at 10.6 mm (117 meV) [32]. However, the experimentally determined laser thresholds are several orders of magnitude larger, in agreement with the 200 ps lifetime of the 2p 0 state in Si:P [61].…”

Section: Intracenter Population Inversion and Gainmentioning

confidence: 99%

“…Fast depletion of the 2p 0 and 2s levels in Si:Bi has been considered as a laser scheme with these states as lower laser levels, because they have very short lifetimes [32]. This proposal is somewhat similar to those later employed in quantum cascade lasers, using the optical phonon for depopulation of the lower laser level [65].…”

Section: Resonant Donor-phonon Interactionmentioning

confidence: 99%

“…7). From theoretical analysis the upper laser level, 2p 0 , has been expected to be long living [15,32,60,62]. Its lifetime, has been experimentally determined from time-resolved analysis of optically induced transmission in Si:P (205 AE 18 ps) and Si:As (104 AE 11 ps) crystals [61].…”

Section: Photoionization Pumpingmentioning

confidence: 99%

“…A similar four-level laser scheme was expected for silicon doped by bismuth, where the laser levels should be determined by resonant interaction with an optical phonon [31,32]. Spontaneous [32,33] and stimulated emission from Si:P crystals were obtained in 1999 [15]. In 2000 Pokrovskiȋ et al proposed using the forbidden optical transitions between 1s-type donor states with the same parity for achieving far-infrared laser action in silicon [34].…”

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confidence: 99%

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The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

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The first silicon laser was reported in the year 2000. It is based on impurity transitions of the hydrogen-like phosphorus donor in monocrystalline silicon. Several lasers based on other group-V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a midinfrared laser and emit light at discrete wavelengths in the range from 50 to 230 mm (between 1.2 and 6.9 THz). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized for donortype terahertz (THz) silicon lasers. Population inversion is achieved due to specific electron-phonon interactions of the impurity atom. This results in long-living and short-living excited states of the donor centers. Another type of THz laser utilizes stimulated resonant Raman-type scattering of photons by a Raman-active intracenter electronic transition. By varying the pump-laser frequency, the frequency of the Raman intracenter silicon laser can be continuously changed between at least 4.5 and 6.4 THz. The gain of the donor and Ramantype THz silicon lasers is of the order of 0.5 to 10 cm À1 , which is similar to the net gain realized in THz quantum cascade lasers and infrared Raman silicon lasers. In addition, fundamental aspects of the laser process provide new information about the peculiarities of electronic capture by shallow impurity centers in silicon, lifetimes of nonequilibrium carriers in excited impurity states, and electron-phonon interaction.

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mentioning

confidence: 88%

Section: Intracenter Population Inversion and Gainmentioning

confidence: 99%

Section: Resonant Donor-phonon Interactionmentioning

confidence: 99%

Section: Photoionization Pumpingmentioning

confidence: 99%

mentioning

confidence: 99%

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The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

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Terahertz Emission Spectra of Optically Pumped Silicon Lasers

H�bers¹,

Pavlov²,

Greiner-B�r³

et al. 2002

phys. stat. sol. (b)

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The emission spectra of terahertz Si lasers measured with a resolution up to 0.3 cm --1 are presented. The laser mechanism is based on intracenter transitions of optically excited Si doped by phosphor or bismuth. The laser transitions and the involved intracenter impurity levels have been identified. For Si : P a single emission line originating from the 2p 0 ! 1s(T 2 ) transition was observed while for Si : Bi two emission lines originating from 2p AE ! 1s(E) and 2p AE ! 1s(T 2 : G 8 ) transitions were observed.

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Optically pumped terahertz semiconductor bulk lasers

Pavlov¹,

Hübers²,

Orlova

et al. 2002

Physica Status Solidi (b)

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The principles of stimulated emission for the terahertz frequency range from shallow impurity centers in bulk semiconductors are discussed. Evidence of stimulated emission from group V donors embedded in silicon (P, Sb, Bi) as well as spontaneous emission from Li acceptor in monocrystalline ZnSe under excitation by CO 2 laser radiation at low temperatures is demonstrated. The temporal behavior and the emission spectra of the lasers are presented. IntroductionToday, semiconductor lasers bridge a wide range of the electromagnetic spectrum. Many everyday applications in information technology and communications are covered by well-known band-gap visible and infrared diode lasers.Far-infrared (or terahertz, THz) semiconductor lasers are required for applications in molecular and solid-state spectroscopy. However, there is a problem in creating population inversions of charged carriers in semiconductors for the THz spaced states because of the fast phonon-assisted and Auger relaxations that usually tend to thermalize carrier distributions. New proposals for THz semiconductor oscillators are based on the intra-band optical transitions: p-Ge intra-valence band bulk lasers [1], inter-subband quantum cascade [2, 3] and fountain lasers [4] as well as SiGe strained heterostructure lasers [5]. These lasers use the fast low-temperature relaxation processes to maintain the population inversion. In this report the results of an investigation of semiconductor oscillators based on the intra-center optical transitions of shallow donors and acceptors are presented. It is shown that both the acoustic phonon-assisted (AP) and optical phonon-assisted (OP) relaxations can be successfully used to reach population inversion between bound excited states of impurity centers and to obtain lasing under optical excitation.Different mechanisms of population inversion for THz light generation based on the phonon-assisted relaxation of non-equilibrium electrons captured on shallow impurity centers in silicon have been proposed recently [6]. One of them is based on the suppression of the AP relaxation for a particular excited state. This results in a relatively long lifetime (~10 −9 s) of the 2p 0 excited neutral donor (P, As, Sb) state, which can be used for the accumulation of charge carriers [7]. Another mechanism uses the resonant coupling of the 2s and 2p 0 excited states of the Bi donor to the ground state via inter-valley optical pho-

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Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon

Cited by 29 publications

References 7 publications

The physical principles of terahertz silicon lasers based on intracenter transitions

The physical principles of terahertz silicon lasers based on intracenter transitions

Terahertz Emission Spectra of Optically Pumped Silicon Lasers

Optically pumped terahertz semiconductor bulk lasers

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