Optically pumped terahertz semiconductor bulk lasers

Pavlov, S. G.; Hübers, H.-W.; Orlova, E. E.; Жукавин, Р.Х.; Riemann, H.; Nakata, Hajime; Shastin, V. N.

doi:10.1002/pssb.200301532

Cited by 21 publications

(21 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…8a). This results in laser emission on transitions originating from the 4p 0 , 4p AE , 5p 0 , and 6p AE states and ending in the short-living 2s state [70]. This was predicted in Ref.…”

Section: Photoionization Pumpingsupporting

confidence: 62%

“…Although this difference seems to be small it results in a significantly more efficient pumping in the case of the Si:Sb laser at 9.6 mm [17]. Pumping by a 9.6-mm line has also advantages with respect to the phonon-resonant electronic relaxation in Si:Bi [70] (see Section 3.2.1). In general, the intensity of the laser signal is a factor 10 3 -10 4 larger than the spontaneous emission signal.…”

Section: ∆mentioning

confidence: 99%

“…Photoluminescence has been observed in a few materials, which have in common the existence of relatively long-living impurity states. Examples are ZnSe:Li, InSb:Cu, Ge:Te [70,101].…”

Section: Determination Of Resonant Electronphonon Interactionsmentioning

confidence: 99%

See 2 more Smart Citations

The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

The first silicon laser was reported in the year 2000. It is based on impurity transitions of the hydrogen-like phosphorus donor in monocrystalline silicon. Several lasers based on other group-V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a midinfrared laser and emit light at discrete wavelengths in the range from 50 to 230 mm (between 1.2 and 6.9 THz). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized for donortype terahertz (THz) silicon lasers. Population inversion is achieved due to specific electron-phonon interactions of the impurity atom. This results in long-living and short-living excited states of the donor centers. Another type of THz laser utilizes stimulated resonant Raman-type scattering of photons by a Raman-active intracenter electronic transition. By varying the pump-laser frequency, the frequency of the Raman intracenter silicon laser can be continuously changed between at least 4.5 and 6.4 THz. The gain of the donor and Ramantype THz silicon lasers is of the order of 0.5 to 10 cm À1 , which is similar to the net gain realized in THz quantum cascade lasers and infrared Raman silicon lasers. In addition, fundamental aspects of the laser process provide new information about the peculiarities of electronic capture by shallow impurity centers in silicon, lifetimes of nonequilibrium carriers in excited impurity states, and electron-phonon interaction.

show abstract

“…8a). This results in laser emission on transitions originating from the 4p 0 , 4p AE , 5p 0 , and 6p AE states and ending in the short-living 2s state [70]. This was predicted in Ref.…”

Section: Photoionization Pumpingsupporting

confidence: 62%

Section: ∆mentioning

confidence: 99%

See 1 more Smart Citation

The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…This can be used for an accumulation of non-equilibrium charge carriers on the state and, therefore, a population inversion appears between the 2p 0 and the lower lying 1s-splitted excited states with shorter lifetimes [8]. Several emission lines in the 1−6 THz range have been obtained from bulk silicon doped by shallow impurities under CO 2 laser pumping at liquid helium temperatures [9]. Transitions between resonant and localized boron centers in strained Si/SiGe heterostructure have been reported recently to be used for THz lasing under electric field pumping at liquid helium temperatures [10].…”

Section: −1mentioning

confidence: 98%

Electrically pumped far‐infrared population inversion in heterostructures doped by shallow impurity centers

Pavlov

2003

phys. stat. sol. (c)

Self Cite

View full text Add to dashboard Cite

Electrically pumped far-infrared lasers based on intra-center optical transitions of shallow impurity centers embedded in the barrier of a semiconductor heterostructure are proposed. The principles of population inversion between excited states of the impurity center under conditions of ballistic heating of well electrons at low lattice temperature are described. IntroductionThe generation of far-infrared (or terahertz) stimulated emission is of great interest for basic and applied research. The physical processes dealing with the above mentioned frequency range include photoexcitation spectra of shallow impurities in semiconductors, cyclotron resonance and lattice vibration frequencies in solid states, energy gaps in low-dimensional semiconductor structures and in superconductors, as well as the rotational spectra of molecules. From an application point of view, the development of fundamental coherent and tunable far-infrared sources is of paramount importance in solid state spectroscopy, radio astronomy, active imaging as well as environmental monitoring.There is a lack of efficient, compact, solid-state sources for the wavelength range of 30−300 µm (1−10 THz). Classic semiconductor band-gap lasers require sophisticated performance for far-infrared light generation (see, e.g. [1]). It is difficult to reach the far-infrared population inversion conditions in solid-state media. The reason of this is that fast acoustic-phonon-assisted and Auger relaxation processes, inherent for solids, equalize non-equilibrium carrier distributions on the THz-range spaced states of the electron (sub-)bands. For example, for the low doped Si/SiGe heterostructures the experiment has yield a few tenths of ps for intersubband lifetimes with the subband separation less than the optical phonon energy [2].In order to overcome this fast carrier relaxation from an upper laser level one has to design a laser scheme, where the depletion of a lower electron state is faster than this relaxation. Additionally, a relatively fast population of the upper laser level is required in order to obtain the maximum gain, since lattice absorption and resonator losses can be very high for particular THz frequencies. One approach has been realized for intersubband semiconductor lasers. In intra-valence-band p-Ge bulk lasers an upper laser subband (lifetime is ~3 × 10 −11 s) is populated by electric field heating of heavy holes (lower laser state subband) followed by a recombination via an optical phonon (process rates are ~10 12 s

show abstract

“…The first silicon lasers were based on optical transitions between excited impurity states under infrared optical excitation of group-V donor centers embedded in a silicon host lattice [12][13][14][15][16]. Intracenter direct transitions in silicon feature a large optical cross-section (up to 10 14 cm À2 ) that can provide both effective optical pumping and significant optical amplification in silicon.…”

Section: Introductionmentioning

confidence: 99%