Failure mechanisms of PVD Ta and ALD TaN barrier layers for Cu contact applications

Zhao, Chao; Tkei, Zs.; Ali, Haider; Demuynck, S.

doi:10.1016/j.mee.2007.05.061

Cited by 36 publications

(29 citation statements)

References 15 publications

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“…Nevertheless, barrier layer formation has become increasingly difficult as the technology node is reduced. [3] An alternative to the conventional barrier process is an organic selfassembled monolayer (SAM) composed of molecules with sub-nm dimensions. [4] The molecules of the SAM are composed of three parts: the head group, the alkyl chain, and the terminal functional group.…”

Section: Introductionmentioning

confidence: 99%

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH₂‐Derived Self‐Assembled Monolayers

Caro

Armini

Richard

et al. 2010

Adv Funct Materials

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A 3‐aminopropyltrimethoxysilane‐derived self‐assembled monolayer (NH2SAM) is investigated as a barrier against copper diffusion for application in back‐end‐of‐line (BEOL) technology. The essential characteristics studied include thermal stability to BEOL processing, inhibition of copper diffusion, and adhesion to both the underlying SiO2 dielectric substrate and the Cu over‐layer. Time‐of‐flight secondary ion mass spectrometry and X‐ray spectroscopy (XPS) analysis reveal that the copper over‐layer closes at 1–2‐nm thickness, comparable with the 1.3‐nm closure of state‐of‐the‐art Ta/TaN Cu diffusion barriers. That the NH2SAM remains intact upon Cu deposition and subsequent annealing is unambiguously revealed by energy‐filtered transmission electron microscopy supported by XPS. The SAM forms a well‐defined carbon‐rich interface with the Cu over‐layer and electron energy loss spectroscopy shows no evidence of Cu penetration into the SAM. Interestingly, the adhesion of the Cu/NH2SAM/SiO2 system increases with annealing temperature up to 7.2 J m−2 at 400 °C, comparable to Ta/TaN (7.5 J m−2 at room temperature). The corresponding fracture analysis shows that when failure does occur it is located at the Cu/SAM interface. Overall, these results demonstrate that NH2SAM is a suitable candidate for subnanometer‐scale diffusion barrier application in a selective coating for copper advanced interconnects.

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Section: Introductionmentioning

confidence: 99%

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH₂‐Derived Self‐Assembled Monolayers

Caro

Armini

Richard

et al. 2010

Adv Funct Materials

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“…El uso de recubrimientos depositados por la técnica PVD -Sputtering es una opción para mejorar las propiedades mecánicas, tribológicas, anticorrosivas y de biocompatibilidad de sustratos usados para aplicaciones en herramientas de corte y maquinado, piezas decorativas, componentes de máquinas, barreras de difusión e implantes biomédicos (Zhao et al, 2007;Hollstein et al, 2001;Bobzin et al, 2009;Bouzakis et al, 2008;Szutkowska, 1999). Uno de los problemas que más se presenta en este tipo de aplicaciones es el deterioro por corrosión que experimentan estos sustratos, los cuales fallan antes de cumplir su ciclo completo incrementando así los costos para los usuarios por cambio de piezas, interrupciones en líneas de producción o reparación de maquinaria.…”

Section: Introductionunclassified

Resistencia a la corrosión de recubrimientos a base de titanio y circonio producidos por magnetrón Sputtering DC

et al. 2010

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ResumenSe depositaron recubrimientos de nitruro de titanio (TiN y TiN/Ti) y nitruro de titanio circonio (TiZrN) sobre aceros AISI 304 y 316L por medio de la técnica magnetrón Sputtering DC para evaluar sus propiedades superficiales y mecánicas, así como la resistencia a la corrosión. El análisis estructural realizado por medio de difracción de rayos X (XRD) mostró que todos los materiales estudiados cristalizaron en una estructura f.c.c, con orientación preferencial en plano de Bragg (111); el recubrimiento de TiZrN, muestra estrés a la compresión por la inclusión de átomos de Zr en la estructura del TiN y se observa ensanchamiento en los picos de difracción debido a la presencia de TiN en la película. Las característi-cas superficiales medidas por perfilometría (rugosidad R a ) y espesor) muestran valores de R a inferiores a 100 nm, típicos de capas delgadas sintetizadas por este método. Los espesores obtenidos varían desde 364,50 nm hasta 580,25 nm. Usando nanoindentación se obtuvieron valores de dureza de capa de TiN, TiN/Ti y TiZrN de 16,173, 18,524 y 17,307 Gpa respectivamente; la evaluación de la resistencia a la corrosión (polarización tafel) muestra que la velocidad de corrosión del acero disminuye cuando la superficie es protegida con un recubrimiento, hecho que se determinó por la reducción de la tasa de corrosión.Palabras clave: Magnetron Sputtering DC; TiZrN; TiN/Ti; corrosión. AbstractTitanium nitride (TiN and TiN/Ti) and titanium zirconium nitride (TiZrN) thin films were deposited on AISI 304 and 316L stainless steels, using DC Magnetron Sputtering, to evaluate the superficial, mechanical and corrosion resistance properties. X Ray Diffraction (XRD) structural analysis performed showed that in all studied systems had f.c.c crystalline structure, with (111) bragg plane preferential orientation. The TiZrN coating shows compressive stress by the inclusion of Zr atoms in the structure of TiN and peak widening is observed due to the presence on the film of TiN. Superficial characteristics obtained by profilometry (roughness (Ra) and thickness) shows Ra values below 100 nm, typical of thin films obtained by this technique. The thickness obtained ranges from 364,50 to 580,25 nm.Using nanoindentation, hardness values TiN, TiN/Ti and TiZrN of 16,173, 18,524 and 17,307 Gpa were obtained for thin films respectively. Corrosion re-

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“…[1,[8][9][10] On semiconductor surfaces, film agglomeration may give rise to electric short, electron migration, and device degradation. [6,11,12] Prevention of these effects presents a great technical challenge and has been one of the most active research areas in recent years. [12][13][14][15][16][17][18][19] One approach towards reducing surface agglomeration is to insert a thin interfacial layer, often referred to as a "glue layer", between the substrate and the adlayer of concern.…”

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confidence: 99%

“…Atomic layer deposition (ALD) [6] is a powerful thin-film deposition technique that provides atomistic control over deposition to support the continued scaling of the TaN barrier with a copper seed layer for advanced-generation CMOS devices. However, seed-layer copper agglomeration on the TaN surfaces has been a bottleneck in the development of this approach.…”

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confidence: 99%

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First‐Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials

Han

Zhou

et al. 2009

Angew Chem Int Ed

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Failure mechanisms of PVD Ta and ALD TaN barrier layers for Cu contact applications

Cited by 36 publications

References 15 publications

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH₂‐Derived Self‐Assembled Monolayers

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH₂‐Derived Self‐Assembled Monolayers

Resistencia a la corrosión de recubrimientos a base de titanio y circonio producidos por magnetrón Sputtering DC

First‐Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials

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Failure mechanisms of PVD Ta and ALD TaN barrier layers for Cu contact applications

Cited by 36 publications

References 15 publications

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH2‐Derived Self‐Assembled Monolayers

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH2‐Derived Self‐Assembled Monolayers

Resistencia a la corrosión de recubrimientos a base de titanio y circonio producidos por magnetrón Sputtering DC

First‐Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials

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Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH₂‐Derived Self‐Assembled Monolayers

Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH₂‐Derived Self‐Assembled Monolayers