2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) 2012
DOI: 10.1109/smelec.2012.6417214
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Failure mechanism and improvement on gate oxide failure at the edge of LOCOS

Lesley Wong Ying Ying
1
,
D. K. Pal
2
,
Raymond R. Tan
3
et al.
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The effect of H3PO4 processing on LDMOS gate oxide integrity in PolySilicon buffered LOCOS

Lik1
2017
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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The effect of H3PO4 processing on LDMOS gate oxide integrity in PolySilicon buffered LOCOS

Lik1
2017
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs

Hung
1
,
Jin
2
,
Chang
3
et al. 2023
IEEE Trans. Device Mater. Relib.
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The effect of H<inf>3</inf>PO<inf>4</inf> processing on LDMOS Gate Oxide Integrity in Polysilicon Buffered LOCOS

Lik
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2017
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
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