Facile synthesis of β–Ga₂O₃ nanowires network for solar-blind ultraviolet photodetector

Abstract

Gallium oxide (Ga2O3) has become a viable candidate for certain types of high-power devices due to its large energy bandgap of 4.9 eV, which has attracted widespread attention. In particular, Ga2O3 nanowire structures have more unique properties due to its larger specific surface area for the high performance solar-blind ultraviolet (UV) photodetectors. In this work, the ultrafine Ga2O3 nanowire network structure is obtained on the sapphire substrate with an Au catalyst by chemical vapor deposition method at 960 °C for 10 min. We can confirm that the growth of the nanowire follows the vapor–liquid–solid growth mechanism and is a β-type Ga2O3 crystal through the performance test results. A solar-blind UV photodetector based on the nanowires network shows an apparent response to solar-blind UV light and almost no response to 365 nm wavelength. Furthermore, the on–off ratio, light responsivity, and response time are also measured under a 254 nm wavelength UV light irradiation, respectively. This work provides a new preparation method to improve the performance of solar-blind UV photodetector.

A Study of Visible-Blind Properties of a SnO2’s Nanowires Network Photodetector

“…Furthermore, even though the VIS Light source's power is considerably higher than the UV one, a low response is detected, which then guarantees not only the device's great sensitivity but also its employment/use as a visible-blind photodetector. The values found for photoconductive gain and transient time were compared to values reported for Ga2O3, WO3, and ZnO [26][27][28]. Our device was proven to be reliable and reproductive, with a photocurrent response great enough for practical applicability and for it to be easily assembled by an uncomplicated fabrication method.…”

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga2O3/Ag

“…It is evident that our detector displays excellent performance compared to other Ga 2 O 3 detectors that utilize graphene as the transparent electrode. 9,11,20,[24][25][26][46][47][48][49][50][51][52][53][54][55][56][57]…”

Transport Mechanism of Enhanced Performance in an Amorphous/Monoclinic Mixed-Phase Ga2O3 Solar-Blind Deep Ultraviolet Photodetector

“…Figure 1a shows the XRD patterns of Ga 2 O 3 films upon increasing the annealing temperature from RT to 500 • C. In the samples annealed between RT to 400 • C (SRT to S400), no signature peak was observed. However, regarding the sample annealed at 500 • C (S500), three distinct peaks were located near 18.40 • , 37.90 • , and 58.71 • , corresponding to the (201), (402), and (603) planes of monoclinic Ga 2 O 3 (β-Ga 2 O 3 ) (PDF#43-1012) [15]. Figure 1b presents the Raman scattering spectra of Ga 2 O 3 films annealed at different temperatures.…”

“…Currently, Ga 2 O 3 solar-blind DUV-PDs based on various material forms (bulk, thin films, and micro-/nanostructures) [13][14][15][16], different polymorphs (amorphous, α, β, γ, and ε-phase) [8,[17][18][19] and diversified device structures (metal-semiconductor-metal (MSM) photodetectors, photodiodes, phototransistors, etc.) [20][21][22][23][24] have made significant progress.…”