MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties. However, MXene-based device engineering has rarely been reported. In this study, we explored Ti 3 C 2 MXene for digital and analog computing applications by engineering the top electrode. For this purpose, Ti 3 C 2 MXene was synthesized by a simple chemical process, and its structural, compositional, and morphological properties were studied using various analytical tools. Finally, we explored its potential application in bipolar resistive switching (RS) and synaptic learning devices. In particular, the effect of the top electrode (Ag, Pt, and Al) on the RS properties of the Ti 3 C 2 MXene-based memory devices was thoroughly investigated. Compared with the Ag and Pt top electrodebased devices, the Al/Ti 3 C 2 /Pt device exhibited better RS and operated more reliably, as determined by the evaluation of the charge-magnetic property and memory endurance and retention. Thus, we selected the Al/Ti 3 C 2 /Pt memristive device to mimic the potentiation and depression synaptic properties and spike-timingdependent plasticity-based Hebbian learning rules. Furthermore, the electron transport in this device was found to occur by a filamentary RS mechanism (based on oxidized Ti 3 C 2 MXene), as determined by analyzing the electrical fitting curves. The results suggest that the 2D Ti 3 C 2 MXene is an excellent nanomaterial for non-volatile memory and synaptic learning applications.