2015
DOI: 10.1021/jp508075x
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Facile Synthesis and High Rate Capability of Silicon Carbonitride/Boron Nitride Composite with a Sheet-Like Morphology

Abstract: International audienceWe report synthesis of a sheet-like composite composed of hexagonal boron nitride (or BN) chemically integrated with silicon carbonitride (SiCN) matrix via a simple pyrolysis route. The composite offers several unique features such as improved electrical conductivity, high-temperature oxidation resistance (at 1000 degrees C), and high electrochemical activity toward Li-ions generally not observed in SiCN or boron-doped SiCN. Tested as electrode in Li-ion half-cell, SiCN/BN show charge cap… Show more

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Cited by 47 publications
(32 citation statements)
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“…The C 1s spectrum has two peaks at 284.5 eV and 283.8 eV corresponding to graphite domains and Si−C bonds within SiC(N) in the nanocomposite. Furthermore, the Si 2p spectrum offers peaks at 100.4 eV and 102 eV attributed to Si−C bonds and Si−N bonds813, which are in good agreement with the FT-IR spectra. Attributed to Si−NH−Si groups, the peaks appearing at 3305 and 570 cm −1 are N−H stretching and Si−N, respectively8.…”
Section: Resultssupporting
confidence: 76%
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“…The C 1s spectrum has two peaks at 284.5 eV and 283.8 eV corresponding to graphite domains and Si−C bonds within SiC(N) in the nanocomposite. Furthermore, the Si 2p spectrum offers peaks at 100.4 eV and 102 eV attributed to Si−C bonds and Si−N bonds813, which are in good agreement with the FT-IR spectra. Attributed to Si−NH−Si groups, the peaks appearing at 3305 and 570 cm −1 are N−H stretching and Si−N, respectively8.…”
Section: Resultssupporting
confidence: 76%
“…Both B 1s and N 1s spectra indicate the direction B–N bonding. A shoulder peak at higher energy (398.3 eV) indicated that the formation of the SiCN phase8. The C 1s spectrum has two peaks at 284.5 eV and 283.8 eV corresponding to graphite domains and Si−C bonds within SiC(N) in the nanocomposite.…”
Section: Resultsmentioning
confidence: 99%
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“…The composite materials consisting of graphite/carbon-poor SiCN or precursor-derived Si(B)CN coated-multiwalled carbon nanotube (CNT) composite exceed by far the sum of the capacities of the single components [27,29,30]. Further, promising efforts have been done by using SiCN as stabilizing matrix for MoS 2 [31] and boron nitride [32]. Core-shell silicon oxycarbide-carbon nanotubes composites demonstrate extremely high capacities of~800 mAh¨g´1 and good capacity recovering at high current [33], while embedding of silicon nanoparticles in SiOC matrix lead to material stabilization with respect to prolonged cycling [34,35].…”
Section: Introductionmentioning
confidence: 99%