Facile one-pot synthesis of polytypic (wurtzite–chalcopyrite) CuGaS2

Vahidshad, Yaser; Mirkazemi, S. M.; Tahir, Muhammad Nawaz; zad, Azam Iraji; Ghasemzadeh, Reza; Tremel, Wolfgang

doi:10.1007/s00339-016-9637-2

Cited by 8 publications

(10 citation statements)

References 60 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…151 It was first investigated as a blue-UV LED material 228,229 , then later as a transparent semiconductor 31 , and has been synthesized using a wide variety of bulk and thin film techniques. [229][230][231][232][233] The p-type conductivity of undoped, near-stoichiometric CuAlS 2 only reaches 0.9 S cm -1 (bulk) 234 and 0.016 S cm -1 (thin film) 235 . However, altering the I/III cation ratio allows for drastic changes in electronic properties.…”

Section: Cu(alga)ch2mentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

show abstract

Section: Cu(alga)ch2mentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…For example low temperatures and increased or exclusive use of OAm promoted the generation of wurtzite. 193…”

Section: Metal Chalcogenidesmentioning

confidence: 99%

Oleic acid/oleylamine ligand pair: a versatile combination in the synthesis of colloidal nanoparticles

et al. 2022

View full text Add to dashboard Cite

show abstract

“…CuInS 2 , with a band gap of 1.45 eV and an absorption coefficient 1.0×10 5 cm −1 , is considered ideal for solar cell applications, while AgInS 2 , with the larger direct band gap of about 1.8 eV, is suitable for applications in photovoltaics . Due to a band gap of 2.49 eV, CuGaS 2 is popular in light‐emission devices operating in red to UV regions . AgGaS 2 has a band gap of approximately 2.7 eV and has received much attention with respect to nonlinear optical applications.…”

Section: Methodsmentioning

confidence: 99%

“…All of the methods employ a range of Group 11 metal sources, for example, AgNO 3 , Ag(dedc) (dedc=diethyldithiocarbamate), Ag 2 S, CuCl, and CuNO 3 ; and Group 13 metal sources, for example, InCl 3 , [In(dedc) 3 ] (dedc=diethyldithiocarbamate), In(NO 3 ) 3 , GaCl 3 , and Ga 2 S 3. Sulfur sources are Na 2 S, thiourea, and elemental S . In addition, several single‐source precursors have been studied, for example, [(Ph 3 P) 2 CuIn(SEt) 4 ] and [(Ph 3 P) 2 AgIn(SCOPh) 4 ], as well as a two‐component system combining Cu and In xanthates .…”

Section: Methodsmentioning

confidence: 99%

Transformation of Indium and Gallium Metal into Mixed Group 11/13 Ternary Sulfide Nanoparticles by Using a Dithioic Acid

et al. 2018

View full text Add to dashboard Cite

Heterobimetallic Group 11/13 sulfide nanoparticles (AgInS2, CuInS2, Ag9GaS6, and CuGaS2) are formed by treatment of [M(S2CAr)3] (M=Ga or In) with either AgNO3 or CuCl under mild conditions. The intermediary gallium or indium tris(aryldithioate) complexes are easily prepared by stirring the appropriate metal and aryldithioc acid at room temperature. Overall, this two‐step process is a simple solution‐based method for transforming Ga and In metal into valuable ternary metallosulfide nanoparticles at relatively low temperatures.

show abstract

Facile one-pot synthesis of polytypic (wurtzite–chalcopyrite) CuGaS2

Cited by 8 publications

References 60 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Oleic acid/oleylamine ligand pair: a versatile combination in the synthesis of colloidal nanoparticles

Transformation of Indium and Gallium Metal into Mixed Group 11/13 Ternary Sulfide Nanoparticles by Using a Dithioic Acid

Contact Info

Product

Resources

About