Facile graphene n-doping by wet chemical treatment for electronic applications

Bong, Jae Hoon; Sul, One Jae; Yoon, Alex; Choi, Sung‐Yool; Cho, Byung Jin

doi:10.1039/c4nr01160k

Cited by 37 publications

(29 citation statements)

References 44 publications

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“…Much attention has been paid on mass production of graphene layers for large scale optoelectronic applications and several methods had been reported for it, including mechanical and chemical exfoliation using reducing agent such as hydrazine [1,2] ammonia [3,4] as well as chemical vapor deposition. The product of the reduction process, commonly referred to as reduced graphene oxide (rGO), is of moderate electrical performance when compared to graphene, mainly due to the presence of oxygen related defects in the graphene lattice induced during the exfoliation and reduction processes.…”

Section: Introductionmentioning

confidence: 99%

Flexible temperature sensor with laser scribed graphene oxide

Kazemzadeh

Kim

2014

14th IEEE International Conference on Nanotechnology

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Fabrication of flexible temperature sensor array using reduced graphene oxide (rGO) by laser scribing is presented. This unique type of sensor employs graphene as sensing material in order to generate temperature distribution map of human skin, which is important for distinguishing some physiological changes. This device is flexible and can be attached easily on wrist or other body parts. CO 2 laser is used to reduce the graphene oxide into highly conductive rGO with less than 3×10 -3 S/m in resistivity. Laser-induced reduction is a very fast, facile, chemical-free, room temperature process that uses the photo-thermal reactivity of GO.978-1-4799-5622-7/$31.00 ©2014 IEEE

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Section: Introductionmentioning

confidence: 99%

Flexible temperature sensor with laser scribed graphene oxide

Kazemzadeh

Kim

2014

14th IEEE International Conference on Nanotechnology

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“…This carrier mobility enhancement achieved by adapting the copolymer dielectric with the higher VIDZ concentration led to the enhanced drain current, together with the increased C i of the copolymer dielectrics. Figure c clearly shows that V Dirac and the charge density in the graphene FET could be modulated systematically by controlling the composition in the p(V3D3‐ co ‐VIDZ) gate dielectric . The V Dirac of the graphene FET with the polymer dielectric without VIDZ moiety was 11 V, indicating that the graphene was significantly p ‐doped .…”

Section: Resultsmentioning

confidence: 95%

A High‐Performance Top‐Gated Graphene Field‐Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

Pak

Kim

et al. 2017

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A high-performance top-gated graphene field-effect transistor (FET) with excellent mechanical flexibility is demonstrated by implementing a surface-energy-engineered copolymer gate dielectric via a solvent-free process called initiated chemical vapor deposition. The ultrathin, flexible copolymer dielectric is synthesized from two monomers composed of 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane and 1-vinylimidazole (VIDZ). The copolymer dielectric enables the graphene device to exhibit excellent dielectric performance and substantially enhanced mechanical flexibility. The p-doping level of the graphene can be tuned by varying the polar VIDZ fraction in the copolymer dielectric, and the Dirac voltage (V ) of the graphene FET can thus be systematically controlled. In particular, the V approaches neutrality with higher VIDZ concentrations in the copolymer dielectric, which minimizes the carrier scattering and thereby improves the charge transport of the graphene device. As a result, the graphene FET with 20 nm thick copolymer dielectrics exhibits field-effect hole and electron mobility values of over 7200 and 3800 cm V s , respectively, at room temperature. These electrical characteristics remain unchanged even at the 1 mm bending radius, corresponding to a tensile strain of 1.28%. The formed gate stack with the copolymer gate dielectric is further investigated for high-frequency flexible device applications.

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“…For instance, given that APTES SAM treatment can provide a more effective and stable n-doping source [87,88] over other doping methods, it is worthwhile to investigate how to achieve a reliable doping level and whether this doping method is also compatible with plastic substrates for the application of APTES SAM to graphene flexible/ transparent electrodes. One of the sources of the degradation of the doping strength is the desorption of dopants in chemical doping methods when the doped graphene sample is exposed to the air ambient [91] while the formation of covalent bonding between the SAM and the target substrate can guarantee environmental doping stability.…”

Section: Interface Engineering Of Graphene/target Substrate 221 Modmentioning

confidence: 99%

Interface engineering for high performance graphene electronic devices

et al. 2015

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A decade after the discovery of graphene flakes, exfoliated from graphite, we have now secured large scale and high quality graphene film growth technology via a chemical vapor deposition (CVD) method. With the establishment of mass production of graphene using CVD, practical applications of graphene to electronic devices have gained an enormous amount of attention. However, several issues arise from the interfaces of graphene systems, such as damage/unintentional doping of graphene by the transfer process, the substrate effects on graphene, and poor dielectric formation on graphene due to its inert features, which result in degradation of both electrical performance and reliability in actual devices. The present paper provides a comprehensive review of the recent approaches to resolve these issues by interface engineering of graphene for high performance electronic devices. We deal with each interface that is encountered during the fabrication steps of graphene devices, from the graphene/metal growth substrate to graphene/high-k dielectrics, including the intermediate graphene/target substrate.

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Facile graphene n-doping by wet chemical treatment for electronic applications

Cited by 37 publications

References 44 publications

Flexible temperature sensor with laser scribed graphene oxide

Flexible temperature sensor with laser scribed graphene oxide

A High‐Performance Top‐Gated Graphene Field‐Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

Interface engineering for high performance graphene electronic devices

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