Facile fabrication of UV photodetector based on spatial network of tetrapod ZnO nanostructures

Hao, Yonghao; Zhao, Jianwei; Qin, Lirong; Guo, Qing; Feng, Xining; Wang, Ping

doi:10.1049/mnl.2011.0721

Cited by 12 publications

(5 citation statements)

References 16 publications

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“…Table 1 summarizes earlier reports on ZnO-nanostructures based UV photodetectors [ 11,35,45,48,49 ] and gives a comparison to our B-FTS and C-FTS devices. As compared to most of the previous reports, our B-FTS UV photodetectors show the best performances in terms of fastest rise/decay times at higher signal ratio ever reported.…”

Section: Communicationmentioning

confidence: 99%

Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV Sensors

Gedamu¹,

Paulowicz²,

Kaps³

et al. 2013

Advanced Materials

458

298

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Two flame-based synthesis methods are presented for fabricating ZnO-nanostructure-based UV photodetectors: burner flame transport synthesis (B-FTS)and crucible flame transport synthesis (C-FTS). B-FTS allows rapid growth of ZnO nanotetrapods and in situ bridging of them into electrical contacts. The photo detector made from interconnected ZnO nanotetrapod networks exhibits fast response/recovery times and a high current ratio under UV illumination.

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Section: Communicationmentioning

confidence: 99%

Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV Sensors

Gedamu¹,

Paulowicz²,

Kaps³

et al. 2013

Advanced Materials

458

298

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“…However, despite the high sensitivity of individual structures, they commonly exhibit several disadvantages, including a slow response rate at room temperature and the need for expensive equipments . The connection of ZnO‐T into networks can be an effective way to increase the sensitivity and response rate through specific and improved sensing mechanisms considering an increased number of potential barriers between external connections . Furthermore, due to the random alignments and the high aspect ratio of the ZnO‐T nano‐ and microstructures, there is high probability for the formation of interconnections allowing continuous paths for current flow through the ZnO‐T networks …”

Section: Introductionmentioning

confidence: 99%

Multifunctional Materials: A Case Study of the Effects of Metal Doping on ZnO Tetrapods with Bismuth and Tin Oxides

Postica

Gröttrup

Adelung

et al. 2016

Adv Funct Materials

153

112

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Hybrid metal oxide nano-and microstructures exhibit novel properties, which make them promising candidates for a wide range of applications, including gas sensing. In this work, the characteristics of the hybrid ZnOBi 2 O 3 and ZnO-Zn 2 SnO 4 tetrapod (T) networks are investigated in detail. The gas sensing studies reveal improved performance of the hybrid networks compared to pure ZnO-T networks. For the ZnO-T-Bi 2 O 3 networks, an enhancement in H 2 gas response is obtained, although the observed p-type sensing behavior is attributed to the formed junctions between the arms of ZnO-T covered with Bi 2 O 3 and the modulation of the regions where holes accumulate under exposure to H 2 gas. In ZnO-T-Zn 2 SnO 4 networks, a change in selectivity to CO gas with high response is noted. The devices based on individual ZnO-T-Bi 2 O 3 and ZnO-T-Zn 2 SnO 4 structures showed an enhanced H 2 gas response, which is explained on the basis of interactions (electronic sensitization) between the ZnO-T arm and Bi 2 O 3 shell layer and single Schottky contact structure, respectively. Density functional theory-based calculations provide mechanistic insights into the interaction of H 2 and CO gas molecules with Bi-and Sn-doped ZnO(0001) surfaces, revealing changes in the Fermi energies, as well as charge transfer between the molecules and surface species, which facilitate gas sensing.

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“…The comparison of the Au/Ag nanowire TE based vertical phototransistor with earlier reports on ZnO-nanostructures (active layer) based UV photodetectors [35][36][37] is summarized in table 1. Different from the general metal oxide based photo detection devices, which are sensitive to ultraviolet, our phototransistor applies Au/Ag nanowires as source transparent electrode and PbSe QDs as active layers and is sensitive to infrared.…”

Section: Resultsmentioning

confidence: 99%

High performance PbSe colloidal quantum dot vertical field effect phototransistors

Zhang

Song

et al. 2016

Nanotechnology

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Here, vertical field effect phototransistors (VFEPTs) based on lead selenide colloidal quantum dots (PbSe CQDs) for infrared photo detection were investigated, using Au/Ag nanowires as the source transparent electrode. VFEPTs have the advantage of easy fabrication of ultrashort channel length devices, as the channel length is simply determined here by the PbSe CQDs active layer's thickness (260 nm). In ultrashort channels, photo-excited carriers quickly (in nanoseconds) transfer to the drain. As soon as a hole (electron) reaches the drain, a hole (electron) is replenished from the source. Accordingly, multiple holes circulate in the ultrashort channel following a single electron-hole photo generation. As a result, the device exhibits superior photoconductive properties over the lateral structure. PbSe CQD VFEPTs show ambipolar operation under low voltage down to one volt at room temperature. Moreover, high photo responsivity and high specific detectivity of 2 × 10(4) A W(-1) and 7 × 10(12) Jones are also achieved in the devices under 808 nm laser illumination. The transparent electrode-based near infrared VFEPTs prepared through this self-assembly solution process show promise for applications in electronics and photoelectronics.

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Facile fabrication of UV photodetector based on spatial network of tetrapod ZnO nanostructures

Cited by 12 publications

References 16 publications

Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV Sensors

Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV Sensors

Multifunctional Materials: A Case Study of the Effects of Metal Doping on ZnO Tetrapods with Bismuth and Tin Oxides

High performance PbSe colloidal quantum dot vertical field effect phototransistors

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