1999
DOI: 10.1002/(sici)1099-159x(199909/10)7:5<331::aid-pip257>3.3.co;2-g
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Fabrication procedures and process sensitivities for CdS/CdTe solar cells

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Cited by 42 publications
(55 citation statements)
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“…2) depending on substrate temperature [5]. For this investigation the CdS buffer layer has been deposited at elevated substrate temperatures of 515°C as often used for CdTe solar cell production, e. g. following the ANTEC technology [15,16], showing a mostly statistical orientation of the grains [5,17,18]. At low temperature, the CdTe films grow almost purely (111)-textured.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…2) depending on substrate temperature [5]. For this investigation the CdS buffer layer has been deposited at elevated substrate temperatures of 515°C as often used for CdTe solar cell production, e. g. following the ANTEC technology [15,16], showing a mostly statistical orientation of the grains [5,17,18]. At low temperature, the CdTe films grow almost purely (111)-textured.…”
Section: Resultsmentioning
confidence: 99%
“…At this temperature regime there is a strong tendency to form pinholes and voids in the growing CdTe films. A random grain orientation is observed at higher deposition temperatures (above 520°C), which is usually used for solar cell fabrication [15,16]. These CdTe films are formed from mostly 3D large and compact grains which, in their lateral size, are comparable to their vertical size.…”
Section: Resultsmentioning
confidence: 99%
“…The sample structures produced at NREL were 7059 Glass, CVD SnO 2 :F, CVD SnO 2 , Chemical Bath CdS, CSS CdTe, and Vapor CdCl 2 [3]. The second sample set was produced at Colorado State University (CSU) and utilized Tec 15 (soda lime) glass substrates and CdS, CdTe, and CdCl 2 vacuum processes consistent with CSU procedures [4].…”
Section: Methodsmentioning
confidence: 99%
“…The remaining bulk of the device consists of a thicker, p-type CdTe layer that requires at least 2 μm in order to absorb 99% of the solar spectrum above 1.45 eV. For some processes, much thicker CdTe layers have been required in order to yield devices with high solar conversion efficiency [4,5]. The latter necessity is due in part to the nature of how back contacts are applied to these devices.…”
Section: Introductionmentioning
confidence: 99%