CdTe thin film solar cells: Interrelation of nucleation, structure, and performance

Luschitz, J.; Siepchen, B.; Schaffner, J. S.; Lakus-Wollny, Kerstin; Haindl, G.; Klein, Andreas; Jaegermann, Wolfram

doi:10.1016/j.tsf.2008.10.075

Cited by 72 publications

(40 citation statements)

References 29 publications

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“…Quality worsening the chalcogenide film texture at intermediate substrate temperatures is evidently related with the change of their growth mechanism from the layer-wise to columnar one. Similar tendencies in dependences s T f − were also observed in the works [19,25] when investigating the CdTe films. a b Fig.…”

Section: Resultssupporting

confidence: 87%

Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Ivashchenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, the complex investigation of structural and optical properties of zinc and cadmium selenide semiconductor films deposited by close-spaced vacuum sublimation method using thermal evaporation on non-oriented substrates was carried out. The structural and phase analyses of the layers condensed at different substrate temperatures were performed. The transmission and reflection spectra of the investigated films have been measured and their main optical characteristics have been calculated.

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Section: Resultssupporting

confidence: 87%

Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Ivashchenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Besides, the extended and point defects in CdTe are the electrically active states [7]. Therefore, they have strong effect on the optical and photoelectric properties of thin films and thus considerably determine solar cells efficiency [8,9]. Further increase in the efficiency of CdTe-based solar cells can be reached only if the structurally perfect CdTe films with optimal defect structure will be used.…”

Section: Introductionmentioning

confidence: 99%

“…It should be noted that the study of the structural properties of CdTe films were widely carried out in [5,6,8,9], but the substructure properties are significantly less studied [5,10].…”

Section: Introductionmentioning

confidence: 99%

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Kosyak

Opanasyuk

Bukivskij

et al. 2010

Journal of Crystal Growth

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a b s t r a c tThe polycrystalline CdTe films were deposited by the close-spaced vacuum evaporation at the different substrate temperatures (150-550 1C). The X-ray diffraction measurements of structural and substructural properties of these films were carried out to study their phase composition and texture. The films' parameters such as the coherent scattering domain size, microdeformation level and mean density of dislocations were determined based on the broadening of diffraction peaks. In this case the Hall and three-fold convolution approximations were used. Surface morphology, grain size and growth mechanism of the films were determined by the scanning electron microscopy. The low temperature photoluminescence measurements allowed us to establish the correlation between the point and extended defect structure on the one hand and the growth conditions on the other. As a result, the growth conditions of CdTe polycrystalline films with fairly good crystal and optical quality were determined.

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“…В последние годы интерес к CdTe заметно усилился благодаря его широкому использованию при создании солнечных батарей, детекторов ионизирующих излучений, фотоприемников [2][3][4][5][6]. С этой целью необ-ходимо вырастить эпитаксиальные пленки CdTe на про-водящей или полупроводниковой подложке [2].…”

Section: Introductionunclassified

“…Поэтому в качестве подложки часто используется кремний (Si). Во многих случаях пленка CdTe на Si растет поликри-сталлической [3][4][5], кроме того, при химическом осажде-нии CdTe некоторые прекурсоры вступают в реакцию с подложкой кремния с образованием фазы Si 2 Te 3 [7], что существенно ухудшает качество CdTe. Карбид кремния (SiC) является гораздо более химически стойким, чем Si, и практически не вступает в реакцию с элемента-ми шестой группы.…”

Section: Introductionunclassified

Эпитаксиальный Рост Пленок Теллурида Кадмия На Кремнии С Буферным Слоем Карбида Кремния

Антипов¹,

Кукушкин²,

Осипов³

2017

Физика Твердого Тела

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Впервые выращен эпитаксиальный теллурид кадмия толщиной 1−3 µm на кремнии с буферным слоем карбида кремния методом открытого термического испарения и конденсации в вакууме. Оптимальная температура подложки составила 500• C при температуре испарителя 580• C, время роста 4 s. Для более качественного роста теллурида кадмия на поверхности кремния предварительно был синтезирован методом топохимического замещения атомов высококачественный буферный слой карбида кремния толщиной ∼ 100 nm. Эллипсометрический, рамановский, рентгеновский и электронографический анализ показали высокое структурное совершенство слоя CdTe и отсутствие поликристаллической фазы.Работа выполнена при финансовой поддержке Российского научного фонда (грант № 14-12-01102).Исследования проводились при использовании оборудования Уникальной научной установки (УНО) " Физика, химия и механика кристаллов и тонких пленок" ФГУН ИПМаш РАН.

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CdTe thin film solar cells: Interrelation of nucleation, structure, and performance

Cited by 72 publications

References 29 publications

Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Эпитаксиальный Рост Пленок Теллурида Кадмия На Кремнии С Буферным Слоем Карбида Кремния

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