Fabrication of β-FeSi2/Si composite films for photovoltaic applications by using scanning annealing

Shinsuke, Terasawa; Inoue, Takeru; Ihara, Masataka

doi:10.1016/j.solmat.2008.10.001

Cited by 10 publications

(8 citation statements)

References 13 publications

(11 reference statements)

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“…The theoretical solar efficiency of ␤-FeSi 2 is 23%, and different type layered and nanoparticle based solar devices are proposed [12,13]. Terasawa and co-workers proposed a composite ␤-FeSi 2 /Si material for solar devices, where iron silicide nanoclusters are built into silicon, which may produce high yield cells [14].…”

Section: Introductionmentioning

confidence: 99%

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Molnár

Dózsa

Erdélyi

et al. 2015

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Molnár

Dózsa

Erdélyi

et al. 2015

Applied Surface Science

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“…In this case photocarriers are generated in the iron silicide particles, which have high photoabsorption coefficient, while carrier transport happens in silicon. This kind of material may result in a superior solar cell as a consequence of its high photoabsorption coefficient and high carrier mobility [18].…”

Section: Introductionmentioning

confidence: 99%

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Molnár

2013

J. Mater. Res.

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A special type of epitaxial growth appears during solid phase thin film reactions, where the reaction product grows epitaxially on the substrate. Some metal silicide layers and nanostructures are known to develop such epitaxial structures. In this study iron silicide was used to study the effect of the growth mode on the epitaxial growth. Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrates by electron gun evaporation of 1.0 nm iron and subsequent annealing at 500-850°C for 60 minutes. The growth processes were checked by reflection high energy electron diffraction, and the formed structures were characterized by scanning electron microscopy and optical microscopy. The iron silicide nanostructures were oriented in square directions epitaxially fitting to the surface of Si(001). The shape and size of the nanostructures depended on the annealing temperature. In some cases the nanoparticles were arranged in circles. This might be the direct consequence of a nucleation controlled type transition of iron monosilicide to iron disilicide phase at nanoscale.

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“…In this case photocarriers are generated in the iron silicide particles, which has high photoabsorption coefficient, while carrier transport happens in silicon. This kind of material may result an excellent, new solar cell as a consequence of its high photoabsorption coefficient and high carrier mobility [5].…”

Section: Introductionmentioning

confidence: 99%

Iron Silicide Nanostructures Prepared by E-Gun Evaporation and Annealing on Si(001)

et al. 2013

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Iron silicide nanostructures were grown on Si(001) by strain-induced, self-assembly method. E-gun evaporated iron particles were deposited both onto room temperature and high temperature Si substrates, and were further annealed in situ. The initial Fe thickness was in the 0.1-6 nm range and the annealing temperatures varied between 500 and 850°C. The phases and structures formed were characterized by reflection high energy electron diffraction and by scanning electron microscopy. The electrical characteristics were investigated by I-V and C-V measurements, and by deep level transient spectroscopy. The size distributions of the formed iron silicide nanostructures were not homogeneous but, were oriented in perpendicular directions on Si(001). Higher temperature annealing resulted in increased particles size and faceting. Electrical characteristics showed critical defect concentration related to Fe.

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Fabrication of β-FeSi2/Si composite films for photovoltaic applications by using scanning annealing

Cited by 10 publications

References 13 publications

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Iron Silicide Nanostructures Prepared by E-Gun Evaporation and Annealing on Si(001)

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