2005
DOI: 10.1063/1.1989442
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Fabrication of ZnO nanoparticles in SiO2 by ion implantation combined with thermal oxidation

Abstract: Zinc-oxide (ZnO) nanoparticles (NPs) are fabricated in silica glasses (SiO2) by implantation of Zn+ ions of 60 keV up to 1.0×1017ions∕cm2 and following thermal oxidation. After the oxidation at 700 °C for 1 h, the absorption in the visible region due to Zn metallic NPs disappears and a new absorption edge due to ZnO appears at ∼3.25eV. Cross-sectional transmission electron microscopy confirms the formation of ZnO NPs of 5–10 nm in diameter within the near-surface region of ∼80nm thick and larger ZnO NPs on the… Show more

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Cited by 70 publications
(45 citation statements)
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References 15 publications
(6 reference statements)
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“…Detailed fabrication conditions and fundamental properties of the NPs are described in our previous papers. [26][27][28][29][30][31] The silica samples containing Zn NPs were irradiated with 200 MeV Xe 14+ ions at room temperature (RT) using the tandem accelerator at the Japan Atomic Energy Agency, Tokai Research and Development Center (JAEA-Tokai). The electronic and nuclear energy losses, and the projected range of 200 MeV Xe ion in SiO 2 , were estimated from SRIM2008 code 32 and are summarized in Table I.…”
Section: Methodsmentioning
confidence: 99%
“…Detailed fabrication conditions and fundamental properties of the NPs are described in our previous papers. [26][27][28][29][30][31] The silica samples containing Zn NPs were irradiated with 200 MeV Xe 14+ ions at room temperature (RT) using the tandem accelerator at the Japan Atomic Energy Agency, Tokai Research and Development Center (JAEA-Tokai). The electronic and nuclear energy losses, and the projected range of 200 MeV Xe ion in SiO 2 , were estimated from SRIM2008 code 32 and are summarized in Table I.…”
Section: Methodsmentioning
confidence: 99%
“…In this paper, we present single-photon emission from defects in ZnO NPs formed by Zn ion implantation followed by thermal oxidation [42,43,50]. We observe red defect emissions under 532 nm excitation at room temperature, where the defects exhibit blinking characteristics with occasional photostability.…”
Section: Introductionmentioning
confidence: 93%
“…ZnO NPs were created by 64 Zn ion implantation at 60 keV with a fluence of 1.0 × 10 17 ions/cm 2 followed by the thermal oxidation of silica glass [42,43]. At an oxidation temperature of 600°C, most of the Zn ions are converted into the Zn metal and remain in this phase.…”
Section: Fabrication Of Zno Npsmentioning
confidence: 99%
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